IRF7240PbF HEXFET Power MOSFET Ultra Low On-Resistance V R max I DSS DS(on) D P-Channel MOSFET -40V 0.015 V = -10V -10.5A GS Surface Mount 0.025 V = -4.5V -8.4A GS Available in Tape & Reel Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon 3 6 S D area. This benefit provides the designer with an 4 5 extremely efficient device for use in battery and load G D management applications.. SO-8 Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique Parameter Max. Units V Drain- Source Voltage -40 V DS I T = 25C Continuous Drain Current, V -10V -10.5 D A GS I T = 70C Continuous Drain Current, V -10V -8.6 A D A GS I Pulsed Drain Current -43 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 20 mW/C V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 06/06/05 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -40 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.025 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.015 V = -10V, I = -10.5A GS D R Static Drain-to-Source On-Resistance DS(on) 0.025 V = -4.5V, I = -8.4A GS D V Gate Threshold Voltage -1.0 -3.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 17 S V = -10V, I = -10.5A fs DS D -15 V = -32V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -32V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 73 110 I = -10.5A g D Q Gate-to-Source Charge 31 47 nC V = -20V gs DS Q Gate-to-Drain Mille) Charge 17 26 V = -10V gd GS t Turn-On Delay Time 52 V = -20V d(on) DD t Rise Time 490 I = -1.0A r D t Turn-Off Delay Time 210 R = 6.0 d(off) G t Fall Time 97 V = -10V f GS C Input Capacitance 9250 V = 0V iss GS C Output Capacitance 580 pF V = -25V oss DS C Reverse Transfer Capacitance 520 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the I Pulsed Source Current integral reverse G SM 43 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 43 65 ns T = 25C, I = -2.5A rr J F Q Reverse Recovery Charge 75 110 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board, t max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com