X-On Electronics has gained recognition as a prominent supplier of IRF7413ZPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7413ZPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7413ZPBF Infineon

IRF7413ZPBF electronic component of Infineon
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See Product Specifications
Part No.IRF7413ZPBF
Manufacturer: Infineon
Category: MOSFETs
Description: International Rectifier MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC
Datasheet: IRF7413ZPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.8913
10 : USD 0.7894
25 : USD 0.7805
100 : USD 0.6455
N/A

Obsolete
0
MOQ : 25
Multiples : 95
25 : USD 0.5663
300 : USD 0.5148
1250 : USD 0.4633
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.3943
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7692
10 : USD 0.6604
100 : USD 0.508
500 : USD 0.4491
1000 : USD 0.3611
2500 : USD 0.3611
10000 : USD 0.3547
25000 : USD 0.3326
50000 : USD 0.3274
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0658
4 : USD 0.5958
51 : USD 0.5599
N/A

Obsolete
0
MOQ : 59
Multiples : 1
59 : USD 0.5416
100 : USD 0.461
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Transistor Type
Type
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Hts Code
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Typical Turn-On Delay Time
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We are delighted to provide the IRF7413ZPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7413ZPBF and other electronic components in the MOSFETs category and beyond.

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IRF7413ZPbF HEXFET Power MOSFET Applications V R max I DSS DS(on) D Control FET for Notebook Processor 10m V = 10V 30V 13A Power GS Control and Synchronous Rectifier MOSFET for Graphics Cards and POL A Converters in Computing, Networking A 1 8 S D and Telecommunication Systems 2 7 S D 3 6 S D Benefits 4 5 G D Ultra-Low Gate Impedance SO-8 Very Low R DS(on) Top View Fully Characterized Avalanche Voltage and Current 100% Tested for R G Lead-Free Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C GS 13 A D Continuous Drain Current, V 10V I T = 70C 10 A A GS D Pulsed Drain Current I 100 DM P T = 25C Power Dissipation 2.5 W A D P T = 70C Power Dissipation 1.6 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 C/W JL Junction-to-Ambient R 50 JA Notes through are on page 10 www.irf.com 1 05/08/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.025 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 8.0 10 V = 10V, I = 13A m GS D 10.5 13 V = 4.5V, I = 10A GS D V Gate Threshold Voltage 1.35 1.80 2.25 V V = V , I = 25A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.0 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 62 S V = 15V, I = 10A DS D Q g Total Gate Charge 9.5 14 Q Pre-Vth Gate-to-Source Charge 3.0 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 3.0 I = 10A gd D Q godr Gate Charge Overdrive 2.5 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 4.0 Q oss Output Charge 5.6 nC V = 15V, V = 0V DS GS R Gate Resistance 2.3 4.5 G t d(on) Turn-On Delay Time 8.7 V = 16V, V = 4.5V DD GS t Rise Time 6.3 I = 10A r D t Turn-Off Delay Time 11 ns Clamped Inductive Load d(off) t Fall Time 3.8 f C iss Input Capacitance 1210 V = 0V GS C oss Output Capacitance 270 pF V = 15V DS C rss Reverse Transfer Capacitance 140 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 32 mJ Avalanche Current I AR 10 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 3.1 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 100 integral reverse SM (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 10A, V = 0V J S GS t rr Reverse Recovery Time 24 36 ns T = 25C, I = 10A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 16 24 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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