IRF7424PbF HEXFET Power MOSFET Ultra Low On-Resistance V R max (m I DSS DS(on) D P-Channel MOSFET -30V 13.5 V = -10V -11A GS Surface Mount 22 V = -4.5V -8.8A GS Available in Tape & Reel Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremely low on-resistance per silicon 6 S D area. This benefit provides the designer with an 4 5 G D extremely efficient device for use in battery and load management applications.. SO-8 Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique Parameter Max. Units V Drain- Source Voltage -30 V DS I T = 25C Continuous Drain Current, V -10V -11 D A GS I T = 70C Continuous Drain Current, V -10V -9.3 A D A GS I Pulsed Drain Current -47 DM P T = 25C Power Dissipation 2.5 D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 20 mW/C V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 10/04/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.019 V/C Reference to 25C, I = -1mA (BR)DSS J D 13.5 V = -10V, I = -11A GS D R Static Drain-to-Source On-Resistance DS(on) m 22 V = -4.5V, I = -8.8A GS D V Gate Threshold Voltage -1.0 -2.5 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 17 S V = -10V, I = -11A fs DS D -15 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -24V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 75 110 I = -11A g D Q Gate-to-Source Charge 14 21 nC V = -15V gs DS Q Gate-to-Drain Mille) Charge 12 18 V = -10V gd GS t Turn-On Delay Time 15 V = -15V d(on) DD t Rise Time 23 I = -1.0A r D t Turn-Off Delay Time 150 R = 6.0 d(off) G t Fall Time 76 V = -10V f GS C Input Capacitance 4030 V = 0V iss GS C Output Capacitance 580 pF V = -25V oss DS C Reverse Transfer Capacitance 410 = 1.0kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the I Pulsed Source Current integral reverse G SM 47 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.5A, V = 0V SD J S GS t Reverse Recovery Time 40 60 ns T = 25C, I = -2.5A rr J F Q Reverse Recovery Charge 47 71 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com