StrongIRFET IRFI7446GPbF HEXFET Power MOSFET Application Brushed motor drive applications D V 40V BLDC motor drive applications DSS Battery powered circuits R typ. 2.6m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.3m Resonant mode power supplies S OR-ing and redundant power switches I 80A D DC/DC and AC/DC converters DC/AC inverters Benefits S Improved gate, avalanche and dynamic dV/dt ruggedness D G Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Lead-Free, RoHS compliant TO-220AB Full-Pak G D S Gate Drain Source Standard Pack Orderable Part Number Base part number Package Type Form Quantity IRFI7446GPbF TO-220 Full-Pak Tube 50 IRFI7446GPbF 10 100 I = 48A 9 D 80 8 7 60 6 T = 125C J 5 40 4 3 20 2 T = 25C J 1 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback May 19, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFI7446GPbF Absolute Maximium Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 80 D C GS I T = 100C Continuous Drain Current, V 10V 57 A D C GS I Pulsed Drain Current 320 DM P T = 25C Maximum Power Dissipation 40.5 W D C Linear Derating Factor 0.27 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 233 AS (Thermally limited) mJ E Single Pulse Avalanche Energy Tested Value 319 AS (tested) I Avalanche Current A AR See Fig. 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 3.7 JC C/W R Junction-to-Ambient 65 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 38 mV/C Reference to 25C, I = 1.0mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 2.6 3.3 V = 10V, I = 48A m DS(on) GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.3 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 270H, R = 50, I = 48A, V =10V. Jmax J G AS GS I 48A, di/dt 894A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J This value determined from sample failure population, starting T =25C, L = 270H, R = 50, I = 48A, V =10V. J G AS GS 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback May 19, 2014