PD - 91402A IRFR/U5305 HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRFR5305) V = -55V DSS l Straight Lead (IRFU5305) l Advanced Process Technology R = 0.065 DS(on) l Fast Switching G l Fully Avalanche Rated I = -31A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight D-Pak I-Pak lead version (IRFU series) is for through-hole mounting IRFR5305 IRFU5305 applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -31 D C GS I T = 100C Continuous Drain Current, V -10V -22 A D C GS I Pulsed Drain Current -110 DM P T = 25C Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 280 mJ AS I Avalanche Current -16 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Junction-to-Ambient (PCB mount)* 50 C/W JA R Junction-to-Ambient** 110 JA 10/23/00IRFR/U5305 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.034 V/C Reference to 25C, I = -1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.065 V = -10V, I = -16A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 8.0 S V = -25V, I = -16A fs DS D -25 V = -55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 63 I = -16A g D Q Gate-to-Source Charge 13 nC V = -44V gs DS Q Gate-to-Drain Mille) Charge 29 V = -10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 14 V = -28V d(on) DD t Rise Time 66 I = -16A r D ns t Turn-Off Delay Time 39 R = 6.8 d(off) G t Fall Time 63 R = 1.6, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 1200 V = 0V iss GS C Output Capacitance 520 pF V = -25V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -31 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -110 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.3 V T = 25C, I = -16A, V = 0V SD J S GS t Reverse Recovery Time 71 110 ns T = 25C, I = -16A rr J F Q Reverse RecoveryCharge 170 250 nC di/dt = -100A/s rr Notes: Pulse width 300s duty cycle 2%. Repetitive rating pulse width limited by max. junction temperature. (See Fig. 11) This is applied for I-PAK, L of D-PAK is measured between S V = -25V, starting T = 25C, L = 2.1mH DD J lead and center of die contact. R = 25, I = -16A. (See Figure 12) G AS Uses IRF5305 data and test conditions. I -16A, di/dt -280A/s, V V , SD DD (BR)DSS T 175C J * When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. ** Uses typical socket mount. 2 www.irf.com