IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters V 200 V DS Plasma Display Panel V min. 260 V DS(Avalanche) R max 10V 54 m DS(on) Benefits T max 175 C J Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS D D D to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free S S S D D G G G TO-262 Pak TO-220AB D2 Pak IRFSL38N20DPbF IRFB38N20DPbF IRFS38N20DPbF G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFB38N20DPbF TO-220 Tube 50 IRFB38N20DPbF IRFSL38N20DPbF TO-262 Tube 50 IRFSL38N20DPbF Tube 50 IRFS38N20DPbF IRFS38N20DPbF D2-Pak Tape and Reel Left 800 IRFS38N20DTRLPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 43* D C GS I T = 100C Continuous Drain Current, V 10V 30* A D C GS I Pulsed Drain Current 180 DM P T = 25C Maximum Power Dissipation 3.8 W D A P T = 25C Maximum Power Dissipation 300* W D C Linear Derating Factor 2.0* W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 9.5 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.47* R JC R Case-to-Sink, Flat, Greased Surface 0.50 CS C/W Junction-to-Ambient 62 R JA Junction-to-Ambient ( PCB Mount, steady state) 40 R JA * R (end of life) for D2Pak and TO-262 = 0.50C/W. This is the maximum measured value after 1000 temperature JC cycles from -55 to 150C and is accounted for by the physical wear out of the die attach medium. Notes through are on page 2. 1 2016-5-31 IRFB/S/SL38N20DPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.22 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.054 V = 10V, I = 26A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D 25 V =200 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J gfs Forward Trans conductance 17 S V = 50V, I = 26A DS D Q Total Gate Charge 60 91 I = 26A g D Q Gate-to-Source Charge 17 25 nC V = 100V gs DS Q Gate-to-Drain Charge 28 42 V = 10V GS gd t Turn-On Delay Time 16 V = 100V d(on) DD t Rise Time 95 I =26A r D ns t Turn-Off Delay Time 29 R = 2.5 d(off) G t Fall Time 47 V = 10V f GS C Input Capacitance 2900 V = 0V iss GS C Output Capacitance 450 V = 25V oss DS C Reverse Transfer Capacitance 73 = 1.0MHz rss pF C Output Capacitance 3550 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 180 V = 0V, V = 160V = 1.0MHz oss GS DS C Effective Output Capacitance 380 V = 0V, V = 0V to 160V oss eff. GS DS Avalanche Characteristics Parameter Min. Typ. Max. Units E Single Pulse Avalanche Energy 460 mJ AS I Avalanche Current 26 A AR E Repetitive Avalanche Energy 390 mJ AR Repetitive Avalanche Voltage V 260 V DS (Avalanche) Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 44 S (Body Diode) showing the A Pulsed Source Current integral reverse I 180 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.5 V T = 25C,I = 26A,V = 0V SD J S GS t Reverse Recovery Time 160 240 ns T = 25C ,I = 26A rr J F Q Reverse Recovery Charge 1.3 2.0 di/dt = 100A/s C rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. starting T = 25C, L = 1.3mH, R = 25 , I = 26A. J G AS I 26A, di/dt 390A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS This is only applied to TO-220AB package. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. 2 2016-5-31