IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH C HYPERFAST DIODE = G % & ( ) E * + , n-channel & ( -. /-0 1 1 ) + 11 1 * 2 % & (3 + ) 1 *1 & (3 1 -. /-0 & (3 4 ) + 1 5 2 D Pak ** 0 * 6 6 1 ) 1 + , &/ & (3 Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 31 C C I T = 100C Continuous Collector Current 17 A C C Pulse Collector Current (Ref.Fig.C.T.5) I 124 CM Clamped Inductive Load current 124 I LM I T = 100C Diode Continuous Forward Current 12 F C I Diode Maximum Forward Current 120 FM V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 100 W D C Maximum Power Dissipation 42 P T = 100C D C T Operating Junction and -55 to +150 C J T Storage Temperature Range STG Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT 1.2 C/W JC R Case-to-Sink, flat, greased surface 0.50 CS R Junction-to-Ambient (PCB Mounted,steady state) 40 JA Wt Weight 2.0 (0.07) g (oz.) www.irf.com 1 IRG4BC30FD-SPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V 600 V V = 0V, I = 250A (BR)CES Collector-to-Emitter Breakdown Voltage GE C V /T V = 0V, I = 1mA Temperature Coeff. of Breakdown Voltage 0.69 V/C (BR)CES J GE C 1.59 1.8 I = 17A V = 15V C GE V I = 31A Collector-to-Emitter Voltage 1.99 V See Fig. 2, 5 CE(on) C 1.7 I = 17A, T = 150C C J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 250A GE(th) CE GE C V /T V = V , I = 250A Threshold Voltage temp. coefficient -11 mV/C GE(th) J CE GE C gfe 6.1 10 S V = 100V, I = 17A Forward Transconductance CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE V = 0V, V = 600V, T = 150C 2500 GE CE J V Diode Forward Voltage Drop 1.4 1.7 V I = 12A See Fig. 13 FM F I = 12A, T = 150C 1.3 1.6 F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 51 77 I = 17A g C Q V = 400V Gate-to-Emitter Charge (turn-on) 7.9 12 nC See Fig. 8 ge CC Q Gate-to-Collector Charge (turn-on) 19 28 V = 15V gc GE t Turn-On delay time 42 T = 25C d(on) J t I = 17A, V = 480V Rise time 26 ns r C CC t Turn-Off delay time 230 350 V = 15V, R = 23 d(off) GE G t Fall time 160 230 Energy losses inlcudetai and f E Turn-On Switching Loss 0.63 diode reverse recovery. on E Turn-Off Switching Loss 1.39 mJ See Fig. 9, 10, 11, 18 off E ts Total Switching Loss 2.02 3.9 t Turn-On delay time 42 T = 150C See Fig. 9,10,11,18 d(on) J t Rise time 27 ns I = 17A, V = 480V r C CC t V = 15V, R = 23 Turn-Off delay time 310 d(off) GE G t Fall time 310 Energy losses inlcudetai and f E Total Switching Loss 3.2 mJ diode reverse recovery. ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 1100 V = 0V ies GE C Output Capacitance 74 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 14 f = 1.0MHz res t Diode Reverse Recovery Time 42 60 ns T = 25C See Fig. rr J 80 120 T = 125C 14 I = 12A J F I Diode Peak Reverse Recovery Current 3.5 6.0 A T = 25C See Fig. rr J 5.6 10 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 80 180 nC T = 25C See Fig. rr J 220 600 T = 125C 16 di/dt 200A/s J di /dt Diode Peak Rate of Fall of Recovery 180 A/s T = 25C See Fig. (rec)M J During t T = 125C b 120 J 17 2 www.irf.com