Short Circuit Rated
UltraFast IGBT
FeaturesFeaturesFeaturesFeaturesFeatures
C
High short circuit rating optimized for motor control,
V = 600V
t =10s, @360V V (start), T = 125C, CES
sc CE J
V = 15V
GE
Combines low conduction losses with high
V = 2.21V
CE(on) typ.
switching speed G
Latest generation design provides tighter parameter
@V = 15V, I = 16A
GE C
distribution and higher efficiency than previous E
generations
n-channel
Benefits
As a Freewheeling Diode we recommend our
TM
HEXFRED ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGBC30K-S and
IRGBC30M-S devices
2
D Pak
Absolute Maximum Ratings
Parameter Max. Units
V Collector-to-Emitter Voltage 600 V
CES
I @ T = 25C Continuous Collector Current 28
C C
I @ T = 100C Continuous Collector Current 16 A
C C
I Pulsed Collector Current 58
CM
I Clamped Inductive Load Current 58
LM
t Short Circuit Withstand Time 10 s
sc
V Gate-to-Emitter Voltage 20 V
GE
E Reverse Voltage Avalanche Energy 260 mJ
ARV
P @ T = 25C Maximum Power Dissipation 100 W
D C
P @ T = 100C Maximum Power Dissipation 42
D C
T Operating Junction and -55 to +150
J
T Storage Temperature Range C
STG
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 1.2
JC
R Case-to-Sink, Flat, Greased Surface 0.5 C/W
CS
R Junction-to-Ambient ( PCB Mounted,steady-state) 40
JA
Wt Weight 1.44 g
www.irf.com 1
4/24/2000IRG4BC30K-S
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Collector-to-Emitter Breakdown Voltage 600 VV = 0V, I = 250A
(BR)CES GE C
V Emitter-to-Collector Breakdown Voltage 18 VV = 0V, I = 1.0A
(BR)ECS GE C
V / T Temperature Coeff. of Breakdown Voltage 0.54 V/CV = 0V, I = 1.0mA
(BR)CES J GE C
2.21 I = 14A
C
2.21 2.7 I = 16A V = 15V
C GE
V Collector-to-Emitter Saturation Voltage V
CE(ON)
2.88 I = 28A See Fig.2, 5
C
2.36 I = 16A , T = 150C
C J
V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A
GE(th) CE GE C
V / T Temperature Coeff. of Threshold Voltage -12 mV/CV = V , I = 250A
GE(th) J CE GE C
g Forward Transconductance 5.4 8.1 SV = 100V, I = 16A
fe CE C
250 V = 0V, V = 600V
GE CE
I Zero Gate Voltage Collector Current 2.0 A V = 0V, V = 10V, T = 25C
GE CE J
CES
1100 V = 0V, V = 600V, T = 150C
GE CE J
I Gate-to-Emitter Leakage Current 100 nA V = 20V
GES GE
Switching Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Q Total Gate Charge (turn-on) 67 100 I = 16A
g C
Q Gate - Emitter Charge (turn-on) 11 16 nC V = 400V See Fig.8
ge CC
Q Gate - Collector Charge (turn-on) 25 37 V = 15V
gc GE
t Turn-On Delay Time 26
d(on)
t Rise Time 28 T = 25C
r J
ns
t Turn-Off Delay Time 130 200 I = 16A, V = 480V
d(off) C CC
t Fall Time 120 170 V = 15V, R = 23
f GE G
E Turn-On Switching Loss 0.36 Energy losses includetai
on
E Turn-Off Switching Loss 0.51 mJ See Fig. 9,10,14
off
E Total Switching Loss 0.87 1.3
ts
t Short Circuit Withstand Time 10 s V = 400V, T = 125C
sc CC J
V = 15V, R = 23 , V < 500V
GE G CPK
t Turn-On Delay Time 25 T = 150C,
d(on) J
t Rise Time 29 I = 16A, V = 480V
r C CC
ns
t Turn-Off Delay Time 190 V = 15V, R = 23
d(off) GE G
t Fall Time 190 Energy losses includetai
f
E Total Switching Loss 1.2 mJ See Fig. 11,14
ts
E Turn-On Switching Loss 0.26 T = 25C, V = 15V, R = 23
on J GE G
E Turn-Off Switching Loss 0.36 mJ I = 14A, V = 480V
off C CC
E Total Switching Loss 0.62 Energy losses includetai
ts
L Internal Emitter Inductance 7.5 nH Measured 5mm from package
E
C Input Capacitance 920 V = 0V
ies GE
C Output Capacitance 110 pF V = 30V See Fig. 7
oes CC
C Reverse Transfer Capacitance 27 = 1.0MHz
res
Details of note through are on the last page
2 www.irf.com