PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power V = 600V CES Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve V = 2.10V CE(on) typ. G efficiency of all power supply topologies 50% reduction of Eoff parameter V = 15V, I = 12A E GE C Low IGBT conduction losses n-channel Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz hard switche mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) 2 D Pak Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 23 C C I T = 100C Continuous Collector Current 12 A C C I Pulsed Collector Current 92 CM I Clamped Inductive Load Current 92 LM V Gate-to-Emitter Voltage 20 V GE E Reverse Voltage Avalanche Energy 180 mJ ARV P T = 25C Maximum Power Dissipation 100 D C W P T = 100C Maximum Power Dissipation 42 D C T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.2 C/W JC R Junction-to-Ambient, ( PCB Mounted,steady-state)* 40 JA * When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. www.irf.com 1 8/13/98IRG4BC30W-S Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V Emitter-to-Collector Breakdown Voltage 18 V V = 0V, I = 1.0A (BR)ECS GE C V /T Temperature Coeff. of Breakdown Voltage 0.34 V/C V = 0V, I = 1.0mA (BR)CES J GE C 2.1 2.7 I = 12A V = 15V C GE V Collector-to-Emitter Saturation Voltage 2.45 I = 23A See Fig.2, 5 C CE(ON) V 1.95 I = 12A , T = 150C C J V Gate Threshold Voltage 3.0 6.0 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 11 16 S V = 100 V, I = 12A fe CE C 250 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current A CES 2.0 V = 0V, V = 10V, T = 25C GE CE J 1000 V = 0V, V = 600V, T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 51 76 I = 12A g C Q Gate - Emitter Charge (turn-on) 7.6 11 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 18 27 V = 15V gc GE t Turn-On Delay Time 25 d(on) t Rise Time 16 T = 25C r J ns t Turn-Off Delay Time 99 150 I = 12A, V = 480V d(off) C CC t Fall Time 67 100 V = 15V, R = 23 f GE G E Turn-On Switching Loss 0.13 Energy losses includetai on E Turn-Off Switching Loss 0.13 mJ See Fig. 9, 10, 13, 14 off E Total Switching Loss 0.26 0.35 ts t Turn-On Delay Time 24 T = 150C, d(on) J t Rise Time 17 I = 12A, V = 480V r C CC ns t Turn-Off Delay Time 150 V = 15V, R = 23 d(off) GE G t Fall Time 150 Energy losses includetai f E Total Switching Loss 0.55 mJ See Fig. 11,13, 14 ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 980 V = 0V ies GE C Output Capacitance 71 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 18 = 1.0MHz res Notes: Repetitive rating V = 20V, pulse width limited by GE max. junction temperature. ( See fig. 13b ) Pulse width 80s duty factor 0.1%. V = 80%(V ), V = 20V, L = 10H, R = 23, CC CES GE G (See fig. 13a) Pulse width 5.0s, single shot. Repetitive rating pulse width limited by maximum junction temperature. 2 www.irf.com