IRG4RC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features Short Circuit Rated UltraFast: Optimized for V = 600V CES high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s 125C, V = 15V GE Generation 4 IGBT design provides tighter V = 2.39V CE(on) typ. G parameter distribution and higher efficiency than previous generation V = 15V, I = 5.0A GE C TM IGBT co-packaged with HEXFRED ultrafast, E ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations Industry standard TO-252AA package Lead-Free Benefits Latest generation 4 IGBT s offer highest power density motor controls possible TM HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses For hints see design tip 97003 Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 9.0 C C I T = 100C Continuous Collector Current 5.0 C C I Pulsed Collector Current 18 A CM I Clamped Inductive Load Current 18 LM I T = 100C Diode Continuous Forward Current 4.0 F C I Diode Maximum Forward Current 16 FM t Short Circuit Withstand Time 10 s sc V Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 38 D C P T = 100C Maximum Power Dissipation 15 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case - IGBT 3.3 JC R Junction-to-Case - Diode 7.0 JC R Junction-to-Ambient (PCB mount)* 50 JA Wt Weight 0.3 (0.01) g (oz) When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.58 V/C V = 0V, I = 1.0mA (BR)CES J GE C V Collector-to-Emitter Saturation Voltage 2.39 2.62 I = 5.0A V = 15V CE(on) C GE 3.25 V I = 9.0A See Fig. 2, 5 C 2.63 I = 5.0A, T = 150C C J V Gate Threshold Voltage 3.0 6.5 V = V , I = 250A GE(th) CE GE C V /T Temperature Coeff. of Threshold Voltage -11 mV/C V = V , I = 250A GE(th) J CE GE C g Forward Transconductance 1.2 1.8 S V = 50V, I = 5.0A fe CE C I Zero Gate Voltage Collector Current 250 A V = 0V, V = 600V CES GE CE 1000 V = 0V, V = 600V, T = 150C GE CE J V Diode Forward Voltage Drop 1.5 1.8 V I = 4.0A See Fig. 13 FM C 1.4 1.7 I = 4.0A, T = 150C C J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 19 29 I = 5.0A g C Q Gate - Emitter Charge (turn-on) 2.9 4.3 nC V = 400V See Fig.8 ge CC Q Gate - Collector Charge (turn-on) 9.8 15 V = 15V gc GE t Turn-On Delay Time 49 d(on) t Rise Time 28 T = 25C r J t Turn-Off Delay Time 97 150 I = 5.0A, V = 480V d(off) C CC t Fall Time 140 210 V = 15V, R = 100 f GE G E Turn-On Switching Loss 0.25 Energy losses includetai on E Turn-Off Switching Loss 0.14 mJ and diode reverse recovery off E Total Switching Loss 0.39 0.48 See Fig. 9,10,14 ts t Short Circuit Withstand Time 10 s V = 360V, T = 125C sc CC J V = 15V, R = 100 , V < 500V GE G CPK t Turn-On Delay Time 46 T = 150C, See Fig. 10,11,14 d(on) J t Rise Time 32 I = 5.0A, V = 480V r C CC t Turn-Off Delay Time 100 V = 15V, R = 100 d(off) GE G t Fall Time 310 Energy losses includetai f E Total Switching Loss 0.56 mJ and diode reverse recovery ts L Internal Emitter Inductance 7.5 nH Measured 5mm from package E C Input Capacitance 220 V = 0V ies GE C Output Capacitance 29 pF V = 30V See Fig. 7 oes CC C Reverse Transfer Capacitance 7.5 = 1.0MHz res t Diode Reverse Recovery Time 28 42 ns T = 25C See Fig. rr J 38 57 T = 125C 14 I = 4.0A J F I Diode Peak Reverse Recovery Current 2.9 5.2 A T = 25C See Fig. rr J 3.7 6.7 T = 125C 15 V = 200V J R Q Diode Reverse Recovery Charge 40 60 nC T = 25C See Fig. rr J 70 105 T = 125C 16 di/dt = 200A/s J di /dt Diode Peak Rate of Fall of Recovery 280 A/s T = 25C See Fig. (rec)M J During t 235 T = 125C 17 b J 2 www.irf.com