PD -96218A
IRG6S320UPbF
Key Parameters
Features
V min
330 V
Advanced Trench IGBT Technology CE
Optimized for Sustain and Energy Recovery
V typ. @ I = 24A
1.45 V
CE(ON) C
circuits in PDP applications
I max @ T = 25C 160 A
RP C
TM
Low V and Energy per Pulse (E )
CE(on) PULSE
T max
150 C
J
for improved panel efficiency
High repetitive peak current capability
Lead Free package
C
C
E
G
G
2
D Pak
E
IRG6S320UPbF
n-channel
GC E
Gate Collector Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
TM
trench IGBT technology to achieve low V and low E rating per silicon area which improve panel
CE(on) PULSE
efficiency. Additional features are 150C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter Units
V Gate-to-Emitter Voltage 30 V
GE
I @ T = 25C Continuous Collector Current, V @ 15V 50
C C GE
I @ T = 100C Continuous Collector, V @ 15V 25
A
C C GE
@ T = 25C 160
I Repetitive Peak Current
RP C
P @T = 25C 114
Power Dissipation W
D C
P @T = 100C Power Dissipation 45
D C
0.91
Linear Derating Factor W/C
T Operating Junction and -40 to + 150
J
T
Storage Temperature Range C
STG
Soldering Temperature for 10 seconds 300
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 1.1 C/W
JC
www.irf.com 1
09/11/09
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
BV V = 0V, I = 500A
Collector-to-Emitter Breakdown Voltage 330 V
CES GE CE
V V = 0V, I = 1 A
Emitter-to-Collector Breakdown Voltage 30 V GE CE
(BR)ECS
Reference to 25C, I = 1mA
V /T Breakdown Voltage Temp. Coefficient 0.30 V/C
CE
CES J
V = 15V, I = 12A
1.20 GE CE
V = 15V, I = 24A
1.45 1.65
GE CE
V V = 15V, I = 48A
Static Collector-to-Emitter Voltage 1.95 V
CE(on) GE CE
V = 15V, I = 60A
2.20 GE CE
V = 15V, I = 48A, T = 150C
2.26
GE CE J
V V = V , I = 250A
Gate Threshold Voltage 2.6 5.0 V
GE(th) CE GE CE
V /T
Gate Threshold Voltage Coefficient -10 mV/C
GE(th) J
V = 330V, V = 0V
I Collector-to-Emitter Leakage Current 1.0 10
CES CE GE
V = 330V, V = 0V, T = 100C
5.0 CE GE J
A
V = 330V, V = 0V, T = 125C
20 100
CE GE J
V = 330V, V = 0V, T = 150C
75
CE GE J
V = 30V
I Gate-to-Emitter Forward Leakage 100 nA
GES GE
V = -30V
Gate-to-Emitter Reverse Leakage -100
GE
g V = 25V, I = 12A
Forward Transconductance 28 S CE CE
fe
V = 200V, I = 12A, V = 15V
Q Total Gate Charge 46 nC
g CE C GE
Q
Gate-to-Collector Charge 7.7
gc
t Turn-On delay time 24 I = 12A, V = 196V
d(on) C CC
t
Rise time 20 ns R = 10, L=210H, L = 150nH
r
G S
t T = 25C
Turn-Off delay time 89
d(off) J
t Fall time 70
f
t I = 12A, V = 196V
Turn-On delay time 23
d(on) C CC
t Rise time 52 ns R = 10, L=200H, L = 150nH
r G S
t Turn-Off delay time 130 T = 150C
d(off) J
t
Fall time 140
f
V = 240V, V = 15V, R = 5.1
t Shoot Through Blocking Time 100 ns
st CC GE G
L = 220nH, C= 0.10F, V = 15V
GE
240
E Energy per Pulse J V = 240V, R = 5.1, T = 25C
PULSE CC G J
L = 220nH, C= 0.10F, V = 15V
GE
280
V = 240V, R = 5.1, T = 100C
CC G J
Class 2
Human Body Model
(Per JEDEC standard JESD22-A114)
ESD
Class B
Machine Model
(Per EIA/JEDEC standard EIA/JESD22-A115)
V = 0V
C Input Capacitance 1160
ies GE
C V = 30V
Output Capacitance 61 pF CE
oes
C Reverse Transfer Capacitance 38 = 1.0MHz, See Fig.13
res
L
Internal Collector Inductance 5.0 Between lead,
C
nH 6mm (0.25in.)
L Internal Emitter Inductance 13 from package
E
and center of die contact
Packaging limitation for this device is 42A.
Half sine wave with duty cycle <= 0.05, ton=2sec.
R is measured at T of approximately 90C.
J
Pulse width 400s; duty cycle 2%.
2 www.irf.com