PD - 97631 IRLML2244TRPbF HEXFET Power MOSFET V -20 V DS V 12 V GS Max G 1 R DS(on) max 54 m 3 D ( V = -4.5V) GS R S 2 DS(on) max TM 95 m Micro3 (SOT-23) ( V = -2.5V) GS IRLML2244TRPbF Application(s) Features and Benefits Benefits Features Low R ( 54m) Lower switching losses DS(on) Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing Environmentally friendly RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units Drain-Source Voltage -20 V V DS -4.3 I T = 25C Continuous Drain Current, V -4.5V D A GS -3.4 A I T = 70C Continuous Drain Current, V -4.5V D A GS Pulsed Drain Current -18 I DM Maximum Power Dissipation 1.3 P T = 25C D A W Maximum Power Dissipation 0.8 P T = 70C D A Linear Derating Factor 0.01 W/C Gate-to-Source Voltage 12 V V GS Junction and Storage Temperature Range -55 to + 150 C T T J, STG Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient R 100 JA C/W R Junction-to-Ambient (t<10s) 99 JA ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 1/24/11 Electric Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.01 V/C Reference to 25C, I = -1mA (BR)DSS J D 42 54 V = -4.5V, I = -4.3A GS D R Static Drain-to-Source On-Resistance m DS(on) 71 95 V = -2.5V, I = -3.4A GS D V Gate Threshold Voltage -0.4 -1.1 V V = V , I = -10A GS(th) DS GS D I 1 V =-16V, V = 0V DSS DS GS Drain-to-Source Leakage Current A 150 V = -16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage -100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage 100 V = -12V GS R Internal Gate Resistance 8.9 G gfs Forward Transconductance 6.5 S V = -10V, I =-4.3A DS D Q Total Gate Charge 6.9 I = -4.3A g D nC Q Gate-to-Source Charge 1.0 V =-10V gs DS Q Gate-to-Drain Mille) Charge 2.9 V = -4.5V gd GS t Turn-On Delay Time 7.0 V =-10V d(on) DD t Rise Time 12 I = -1A r D ns t Turn-Off Delay Time 34 R = 6.8 d(off) G t Fall Time 25 V = -4.5V f GS C Input Capacitance 570 V = 0V iss GS pF C Output Capacitance 160 V = -16V oss DS C Reverse Transfer Capacitance 110 = 1.0KHz rss Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D -1.3 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -18 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -4.3A, V = 0V SD J S GS t Reverse Recovery Time 21 32 ns T = 25C, V = -16V, I =-4.3A rr J R F Q Reverse Recovery Charge 9.0 14 nC di/dt = 100A/s rr 2 www.irf.com