MMBT 2222A LT1 Infineon

SMBT2222A/MMBT2222A NPN Silicon Switching Transistor Low collector-emitter saturation voltage 2 3 Complementary type: 1 SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1P SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage V CEO 75 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 600 mA Collector current I C 330 mW Total power dissipation- P tot T 77 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 220 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-08-19 1SMBT2222A/MMBT2222A Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 40 - - Collector-emitter breakdown voltage V V (BR)CEO I = 10 mA, I = 0 C B Collector-base breakdown voltage V 75 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 60 V, I = 0 - - 0.01 CB E V = 60 V, I = 0 , T = 150 C - - 10 CB E A - - 10 nA Emitter-base cutoff current I EBO V = 3 V, I = 0 EB C 1) - DC current gain h FE I = 100 A, V = 10 V 35 - - C CE I = 1 mA, V = 10 V 50 - - C CE I = 10 mA, V = 10 V 75 - - C CE I = 150 mA, V = 1 V 50 - - C CE I = 150 mA, V = 10 V 100 - 300 C CE I = 500 mA, V = 10 V 40 - - C CE 1) Collector-emitter saturation voltage V V CEsat I = 150 mA, I = 15 mA - - 0.3 C B I = 500 mA, I = 50 mA - - 1 C B 1) Base emitter saturation voltage V BEsat I = 150 mA, I = 15 mA 0.6 - 1.2 C B I = 500 mA, I = 50 mA - - 2 C B 1 Pulse test: t < 300s D < 2% 2011-08-19 2