PZTA92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA42 (NPN) 3 2 1 VPS05163 Type Marking Pin Configuration Package PZTA92 PZTA 92 1=B 2=C 3=E 4=C SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage 300 V V CEO Collector-base voltage 300 V CBO Emitter-base voltage 5 V EBO DC collector current 500 mA I C Base current 100 I B 1.5 W Total power dissipation, T = 124 C P S tot Junction temperature 150 C T j Storage temperature -65 ... 150 T stg Thermal Resistance 1) Junction - soldering point R 17 K/W thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA 1 Dec-12-2001PZTA92 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage 300 - - V V (BR)CEO I = 1 mA, I = 0 C B 300 - - Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 C E Emitter-base breakdown voltage 5 - - V (BR)EBO I = 10 A, I = 0 E C Collector cutoff current - - 250 nA I CBO V = 200 V, I = 0 CB E Collector cutoff current - - 20 A I CBO V = 200 V, I = 0 , T = 150 C CB E A Emitter cutoff current - - 100 nA I EBO V = 3 V, I = 0 EB C DC current gain 1) h - FE I = 1 mA, V = 10 V 25 - - C CE I = 10 mA, V = 10 V 40 - - C CE I = 30 mA, V = 10 V 25 - - C CE Collector-emitter saturation voltage1) - - 0.5 V V CEsat I = 20 mA, I = 2 mA C B Base-emitter saturation voltage 1) - - 0.9 V BEsat I = 20 mA, I = 2 mA C B AC Characteristics Transition frequency - 100 - MHz f T I = 20 mA, V = 10 V, f = 100 MHz C CE Collector-base capacitance - - 6 pF C cb V = 20 V, f = 1 MHz CB 1) Pulse test: t < 300 s D < 2% 2 Dec-12-2001