SMBT3904...PN NPN / PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN / PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT3904PN SMBT3904UPN C1 B2 E2 6 54 TR2 TR1 1 2 3 E1 B1 C2 EHA07177 Type Marking Pin Configuration Package SMBT3904PN s3P 1=E 2=B 3=C 4=E 5=B 6=C SOT363 SMBT3904UPN s3P 1=E 2=B 3=C 4=E 5=B 6=C SC74 Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage V CEO 40 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 200 mA Collector current I C mW Total power dissipation- P tot T 115 C, SMBT3904PN 250 S T 105 C, SMBT3904UPN 330 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2012-08-21 1SMBT3904...PN Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS SMBT3904PN 140 SMBT3904UPN 135 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 40 - - Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 40 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I - - 50 nA CBO V = 30 V, I = 0 CB E 2) - DC current gain h FE I = 100 A, V = 1 V 40 - - C CE I = 1 mA, V = 1 V 70 - - C CE I = 10 mA, V = 1 V 100 - 300 C CE I = 50 mA, V = 1 V 60 - - C CE I = 100 mA, V = 1 V 30 - - C CE 2) Collector-emitter saturation voltage V V CEsat I = 10 mA, I = 1 mA - - 0.25 C B I = 50 mA, I = 5 mA - - 0.4 C B 2) Base emitter saturation voltage V BEsat I = 10 mA, I = 1 mA 0.65 - 0.85 C B I = 50 mA, I = 5 mA - - 0.95 C B 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2012-08-21 2