SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 s2A 1=B 2=E 3=C - - - SOT23 SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage V CEO 40 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 200 mA Collector current I C mW Total power dissipation- P tot T 71C, SOT23, MMBT3906 330 S T 115C, SOT363, MMBT3906S 250 S T 107C, SC74, MMBT3906U 330 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2012-08-21 1SMBT3906...MMBT3906 Thermal Resistance Parameter Symbol Value Unit 1) mW Junction - soldering point R thJS SMBT3906/ MMBT3906 240 SMBT3906S 140 SMBT3906U 130 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 40 - - Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 40 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I - - 50 nA CBO V = 30 V, I = 0 CB E 1) - DC current gain h FE I = 100 A, V = 1 V 60 - - C CE I = 1 mA, V = 1 V 80 - - C CE I = 10 mA, V = 1 V 100 - 300 C CE I = 50 mA, V = 1 V 60 - - C CE I = 100 mA, V = 1 V 30 - - C CE 1) Collector-emitter saturation voltage V V CEsat I = 10 mA, I = 1 mA - - 0.25 C B I = 50 mA, I = 5 mA - - 0.4 C B 1) Base emitter saturation voltage V BEsat I = 10 mA, I = 1 mA 0.65 - 0.85 C B I = 50 mA, I = 5 mA - - 0.95 C B 1 Pulse test: t < 300s D < 2% 2012-08-21 2