SMBTA06UPN NPN / PNP Silicon AF Transistor Array High breakdown voltage 4 3 Low collector-emitter saturation voltage 5 2 6 1 Two (galvanic) internal isolated NPN/PNP Transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 54 Tape loading orientation TR2 Marking on SC74 package TR1 Top View (for example W1s) 6 5 4 corresponds to pin 1 of device 1 2 3 W1s E1 B1 C2 Position in tape: pin 1 EHA07177 12 3 opposite of feed hole side Direction of Unreeling SC74 Tape Type Marking Pin Configuration Package SMBTA06UPN s2P 1=E 2=B 3=C 4=E 5=B 6=C SC74 Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage V CEO 80 Collector-base voltage V CBO 4 Emitter-base voltage V EBO 500 mA Collector current I C 1 A Peak collector current, t 10 ms I p CM 100 mA Base current I B 200 Peak base current I BM 330 mW Total power dissipation- P tot T 115 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 1 2011-10-05SMBTA06UPN Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 105 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 80 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 80 - - (BR)CBO I = 100 A, I = 0 C E Emitter-base breakdown voltage V 4 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 80 V, I = 0 - - 0.1 CB E V = 80 V, I = 0 , T = 150 C - - 20 CB E A Collector-emitter cutoff current I - - 100 nA CEO V = 60 V, I = 0 CE B 2) - DC current gain h FE I = 10 mA, V = 1 V 100 - - C CE I = 100 mA, V = 1 V 100 - - C CE 2) Collector-emitter saturation voltage V - - 0.25 V CEsat I = 100 mA, I = 10 mA C B 2) Base-emitter voltage V - - 1.2 BE(ON) I = 100 mA, V = 1 V C CE AC Characteristics - 100 - MHz Transition frequency f T I = 20 mA, V = 5 V, f = 20 MHz C CE - 7 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 Pulse test: t < 300s D < 2% 2 2011-10-05