SMBTA56/MMBTA56 PNP Silicon AF Transistor Low collector-emitter saturation voltage 2 3 Complementary type: SMBTA06 / MMBTA06(NPN) 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA56/MMBTA56 s2G SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage V CEO 80 Collector-base voltage V CBO Emitter-base voltage V 4 EBO 500 mA Collector current I C 1 A Peak collector current, t 10 ms I p CM 100 mA Base current I B 200 Peak base current I BM 330 mW Total power dissipation- P tot T 79C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 215 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-08-05 1SMBTA56/MMBTA56 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 80 - - Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 80 - - (BR)CBO I = 100 A, I = 0 C E Emitter-base breakdown voltage V 4 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 80 V, I = 0 - - 0.1 CB E V = 80 V, I = 0 , T = 150 C - - 20 CB E A Collector-emitter cutoff current I - - 0.1 CEO V = 60 V, I = 0 CE B 1) - DC current gain h FE I = 10 mA, V = 1 V 100 - - C CE I = 100 mA, V = 1 V 100 - - C CE 1) Collector-emitter saturation voltage V - - 0.25 V CEsat I = 100 mA, I = 10 mA C B 1) Base-emitter voltage V - - 1.2 BE(ON) I = 100 mA, V = 1 V C CE AC Characteristics - 100 - MHz Transition frequency f T I = 20 mA, V = 5 V, f = 20 MHz C CE - 7 - pF Collector-base capacitance C cb V = 10 V, f = 1 MHz CB 1 Pulse test: t < 300s D < 2% 2011-08-05 2