SMBTA92/MMBTA92 PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets 2 3 and switching power supplies 1 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 / MMBT42 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA92/MMBTA92 s2D SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter voltage V CEO 300 Collector-base voltage V CBO 5 Emitter-base voltage V EBO 500 mA Collector current I C 100 Base current I B 360 mW Total power dissipation- P tot T 74 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 210 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-12-19 1SMBTA92/MMBTA92 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 300 - - Collector-emitter breakdown voltage V V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 300 - - (BR)CBO I = 100 A, I = 0 C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 100 A, I = 0 E C Collector-base cutoff current I A CBO V = 200 V, I = 0 - - 0.1 CB E V = 200 V, I = 0 , T = 150 C - - 20 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 5 V, I = 0 EB C 1) - DC current gain h FE I = 1 mA, V = 10 V 25 - - C CE I = 10 mA, V = 10 V 40 - - C CE I = 30 mA, V = 10 V 25 - - C CE 1) Collector-emitter saturation voltage V - - 0.5 V CEsat I = 20 mA, I = 2 mA C B 1) Base emitter saturation voltage V - - 0.9 BEsat I = 20 mA, I = 2 mA C B AC Characteristics 50 - - MHz Transition frequency f T I = 20 MHz, V = 10 V, f = 100 MHz C CE - - 6 pF Collector-base capacitance C cb V = 20 V, f = 1 MHz CB 1 Pulse test: t < 300s D < 2% 2011-12-19 2