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X-On Electronics has gained recognition as a prominent supplier of SPD50N03S2L-06 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPD50N03S2L-06 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPD50N03S2L-06 Infineon

SPD50N03S2L-06 electronic component of Infineon
SPD50N03S2L-06 Infineon
SPD50N03S2L-06 MOSFETs
SPD50N03S2L-06  Semiconductors

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See Product Specifications
Part No. SPD50N03S2L-06
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 30V 50A DPAK-2
Datasheet: SPD50N03S2L-06 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.6931
10 : USD 1.5173
25 : USD 1.3383
100 : USD 1.2045
250 : USD 1.0484
500 : USD 0.9369
1000 : USD 0.7361
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SPD50N03S2L-06 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPD50N03S2L-06 and other electronic components in the MOSFETs category and beyond.

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SPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Feature V 30 V DS N-Channel R 6.4 mW DS(on) Enhancement mode I 50 A D Logic Level PG-TO252-3-11 High Current Rating Excellent Gate Charge x R product (FOM) DS(on) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPD50N03S2L-06 PG-TO252-3-11 Q67042-S4084 PN03L06 Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit 1) A Continuous drain current I D T =25C 50 C 50 Pulsed drain current I 200 D puls T =25C C 250 mJ Avalanche energy, single pulse E AS I =50 A , V =25V, R =25W D DD GS 2) E 13 Repetitive avalanche energy, limited by T AR jmax Reverse diode dv/dt dv/dt 6 kV/s I =50A, V =24V, di/dt=200A/s, T =175C S DS jmax Gate source voltage V V 20 GS Power dissipation P 136 W tot T =25C C C Operating and storage temperature T , T -55... +175 j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.1 Page 1 2005-02-14SPD50N03S2L-06 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics R - 0.7 1.1 K/W Thermal resistance, junction - case thJC R - - 100 Thermal resistance, junction - ambient, leaded thJA SMD version, device on PCB: R thJA min. footprint - - 75 2 3) 6 cm cooling area - - 50 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V 30 - - V (BR)DSS V =0V, I =1mA GS D 1.2 1.6 2 Gate threshold voltage, V = V V GS DS GS(th) I = 85 A D A Zero gate voltage drain current I DSS V =30V, V =0V, T =25C - 0.01 1 DS GS j V =30V, V =0V, T =125C - 10 100 DS GS j - 1 100 nA Gate-source leakage current I GSS V =20V, V =0V GS DS - 6.8 9.2 Drain-source on-state resistance R mW DS(on) V =4.5V, I =50A GS D - 4.7 6.4 Drain-source on-state resistance R DS(on) V =10V, I =50A GS D 1 Current limited by bondwire with an R = 1.1K/W the chip is able to carry I = 113A at 25C, for detailed thJC D information see app.-note ANPS071E available at www.infineon.com/optimos 2 Defined by design. Not subject to production test. 3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.1 Page 2 2005-02-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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