SPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Feature V 30 V DS N-Channel R 6.4 mW DS(on) Enhancement mode I 50 A D Logic Level PG-TO252-3-11 High Current Rating Excellent Gate Charge x R product (FOM) DS(on) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPD50N03S2L-06 PG-TO252-3-11 Q67042-S4084 PN03L06 Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit 1) A Continuous drain current I D T =25C 50 C 50 Pulsed drain current I 200 D puls T =25C C 250 mJ Avalanche energy, single pulse E AS I =50 A , V =25V, R =25W D DD GS 2) E 13 Repetitive avalanche energy, limited by T AR jmax Reverse diode dv/dt dv/dt 6 kV/s I =50A, V =24V, di/dt=200A/s, T =175C S DS jmax Gate source voltage V V 20 GS Power dissipation P 136 W tot T =25C C C Operating and storage temperature T , T -55... +175 j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.1 Page 1 2005-02-14SPD50N03S2L-06 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics R - 0.7 1.1 K/W Thermal resistance, junction - case thJC R - - 100 Thermal resistance, junction - ambient, leaded thJA SMD version, device on PCB: R thJA min. footprint - - 75 2 3) 6 cm cooling area - - 50 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V 30 - - V (BR)DSS V =0V, I =1mA GS D 1.2 1.6 2 Gate threshold voltage, V = V V GS DS GS(th) I = 85 A D A Zero gate voltage drain current I DSS V =30V, V =0V, T =25C - 0.01 1 DS GS j V =30V, V =0V, T =125C - 10 100 DS GS j - 1 100 nA Gate-source leakage current I GSS V =20V, V =0V GS DS - 6.8 9.2 Drain-source on-state resistance R mW DS(on) V =4.5V, I =50A GS D - 4.7 6.4 Drain-source on-state resistance R DS(on) V =10V, I =50A GS D 1 Current limited by bondwire with an R = 1.1K/W the chip is able to carry I = 113A at 25C, for detailed thJC D information see app.-note ANPS071E available at www.infineon.com/optimos 2 Defined by design. Not subject to production test. 3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.1 Page 2 2005-02-14