X-On Electronics has gained recognition as a prominent supplier of MMBT5551 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551 Bipolar Transistors - BJT are a product manufactured by Jingdao. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5551 Jingdao

Name: MMBT5551
Brand: Jingdao
SKU: MMBT5551_Jingdao
Availability: InStock
Rating: 5 (11 reviews)

MMBT5551 electronic component of Jingdao

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Part No.	MMBT5551
Manufacturer:	Jingdao
Category:	Bipolar Transistors - BJT
Description:	160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Datasheet:	MMBT5551 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0222 ea
Line Total: USD 1.11

Availability - 4122
Ship by Wed. 26 Mar to Mon. 31 Mar

MOQ: 50 Multiples: 50
Pack Size: 50

MMBT5551 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

4122

Ship by Wed. 26 Mar to Mon. 31 Mar

MOQ : 50
Multiples : 50

50 : USD 0.0222
500 : USD 0.017
3000 : USD 0.0109
6000 : USD 0.0095
24000 : USD 0.0084
51000 : USD 0.0076

Specifications

Manufacturer

Jingdao Jingdao

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Package

SOT - 23 SOT - 23

Rohs

y y

Collector Cut-Off Current Icbo

50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo

160 V 160 V

Power Dissipation Pd

300 mW 300 mW

Dc Current Gain Hfe@Ic Vce

100@10 mA , 5V 100@10 mA , 5V

Collector Current Ic

600 mA 600 mA

Transition Frequency Ft

100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

200 mV @50 mA , 5 mA 200 mV @50 mA , 5 mA

Transistor Type

NPN NPN

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

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Additional Infomation About Product

The MMBT5551 is a NPN Bipolar Transistor designed for low voltage and low power applications, packaged in a RoHS-compliant SOT-23 case. It has a Collector-Emitter Voltage of up to 160V, a continuous Drain Current of up to 100mA and a Power Dissipation of 300mW. It also has a Peak Collector-Emitter Voltage of 5V and a Peak Collector Current of 600mA. It is manufactured by Jingdao.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
4122 Ship by Wed. 26 Mar to Mon. 31 Mar MOQ : 50 Multiples : 50	50 : USD 0.0222 500 : USD 0.017 3000 : USD 0.0109 6000 : USD 0.0095 24000 : USD 0.0084 51000 : USD 0.0076

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Image	Part-Description
Hot	KSP05TA Bipolar (BJT) Transistor NPN 60 V 500 mA 100MHz 625 mW Through Hole TO-92-3 Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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