MMBT5551 ON Semiconductor

DATA SHEET www.onsemi.com NPN General-Purpose Amplifier 3 2 MMBT5551 1 1. Base 2. Emitter 3. Collector Description This device is designed for general purpose high voltage SOT233 CASE 318BM amplifiers and gas discharge display drivers. Features MARKING DIAGRAM This Devices is PbFree, Halogen Free/BFR Free and is RoHS Compliant &Y ABSOLUTE MAXIMUM RATINGS (Note 1) 3S&E&G Symbol Parameter Value Unit V CollectorEmitter Voltage 160 V CEO &Y = onsemi Logo V CollectorBase Voltage 180 V CBO 3S = Specific Device Code V EmitterBase Voltage 6 V EBO &E = Designated Space &G = PbFree Package I Collector Current Continuous 600 mA C T , T Operating and Storage Temperature 55 to + 150 C J STG (Note 2) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering and shipping information on page 5 of device. If any of these limits are exceeded, device functionality should not be this data sheet. assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These ratings are based on a maximum junction temperature of 150C. These are steadystate limits. onsemi should be consulted on applications involving pulsed or low duty cycle operations. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: September, 2021 Rev. 3 MMBT5551/DMMBT5551 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 3) A Max Symbol Characteristic Unit P Total Device Dissipation 350 mW D Derate Above 25 C 2.8 mW/ C R Thermal Resistance, Junction to Ambient 357 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 4) A Symbol Parameter Test Conditions Min Max Unit V CollectorEmitter Breakdown Voltage I = 1.0 mA, I = 0 160 V (BR)CEO C B V CollectorBase Breakdown Voltage I = 100 A, I = 0 180 V (BR)CBO C E V EmitterBase Breakdown Voltage I = 10 A, I = 0 6.0 V (BR)EBO E C I Collector CutOff Current V = 120 V, I = 0 50 nA CBO CB E V = 120 V, I = 0 V, T = 100 C 50 A CB E A I Emitter CutOff Current V = 4.0 V, I = 0 50 nA EBO EB C ON CHARACTERISTICS h DC Current Gain I = 1.0 mA, V = 5.0 V 80 FE C CE I = 10 mA, V = 5.0 V 80 250 C CE I = 10 mA, V = 5.0 V 180 240 C CE (for 2N5551YBU, 2N5551YTA) I = 50 mA, V = 5.0 V 30 C CE V CollectorEmitter Saturation Voltage I = 10 mA, I = 1.0 mA 0.15 V CE(sat) C B I = 50 mA, I = 5.0 mA 0.20 V C B V BaseEmitter On Voltage I = 10 mA, I = 1.0 mA 1.0 V BE(sat) C B I = 50 mA, I = 5.0 mA 1.0 V C B SMALLSIGNAL CHARACTERISTICS f Current Gain Bandwidth Product I = 10 mA, V = 10 V, f = 100 MHz 100 MHz T C CE C Output Capacitance V = 10 V, I = 0, f = 1.0 MHz 6.0 pF obo CB E C Input Capacitance V = 0.5 V, I = 0, f = 1.0 MHz 20 pF ibo BE C H SmallSignal Current Gain I = 1.0 mA, V = 10 V, f = 1.0 kHz 50 250 fe C CE NF Noise Figure 8.0 dB I = 250 A, V = 5.0 V, C CE R = 1.0 k , f = 10 Hz to 15.7 kHz S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3 3. PCB board size FR4 76 x 114 x 0.6 T mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Pulse test: pulse width 300 s, duty cycle 2.0%. www.onsemi.com 2