X-On Electronics has gained recognition as a prominent supplier of MMBT5551 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551 Bipolar Transistors - BJT are a product manufactured by TWGMC. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5551 TWGMC

Name: MMBT5551
Brand: TWGMC
SKU: MMBT5551_TWGMC
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	MMBT5551
Manufacturer:	TWGMC
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT23 RoHS
Datasheet:	MMBT5551 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0177 ea
Line Total: USD 0.88

Availability - 156245
Ship by Mon. 29 Jul to Thu. 01 Aug

MOQ: 50 Multiples: 50
Pack Size: 50

MMBT5551 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

144256

Ship by Mon. 29 Jul to Thu. 01 Aug

MOQ : 50
Multiples : 50

50 : USD 0.0166
500 : USD 0.0134
3000 : USD 0.0109
6000 : USD 0.01
24000 : USD 0.009
51000 : USD 0.0085

Specifications

Manufacturer
TWGMC TWGMC

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT23 SOT23

Brand Category
Twgmc Twgmc

Collector Cut-Off Current Icbo
50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo
160 V 160 V

Power Dissipation Pd
300 mW 300 mW

Collector Current Ic
600 mA 600 mA

Dc Current Gain Hfe@Ic Vce
100@10 mA , 5V 100@10 mA , 5V

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
200 mV @50 mA , 5 mA 200 mV @50 mA , 5 mA

Transistor Type
NPN NPN

Operating Temperature
+ 150 C @ (Tj) + 150 C @ (Tj)

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We are delighted to provide the MMBT5551 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The MMBT5551 is an NPN Transistor with SOT23-3 package in RoHS compliant manufactured by Taiwan Semiconductor. The device features good DC current gain (hFE) and fast switching speed. It has an avalanche-energy rated capable of safe operating area protection products. The MMBT5551 is primarily used for medium and low-power applications. It is designed for high speed switching and can be used as a driver for larger transistors. It can also be used as a high-side switch. The device is suitable for any application where linearity and high gain are required.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
144256 Ship by Mon. 29 Jul to Thu. 01 Aug MOQ : 50 Multiples : 50	50 : USD 0.0166 500 : USD 0.0134 3000 : USD 0.0109 6000 : USD 0.01 24000 : USD 0.009 51000 : USD 0.0085

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Image	Part-Description
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