X-On Electronics has gained recognition as a prominent supplier of L2N7002DW1T1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. L2N7002DW1T1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

L2N7002DW1T1G Leshan

Name: L2N7002DW1T1G
Brand: Leshan
SKU: L2N7002DW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

L2N7002DW1T1G electronic component of Leshan

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See Product Specifications

Part No.	L2N7002DW1T1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET 2 N Channel (Dual) 60V 115mA (Tc) 2V @ 250uA 7.5 Î© @ 500mA,10V SC-88 RoHS
Datasheet:	L2N7002DW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0255 ea
Line Total: USD 0.51

Availability - 52343
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 20 Multiples: 20
Pack Size: 20

L2N7002DW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

52343

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 20
Multiples : 20

20 : USD 0.0255
200 : USD 0.0201
600 : USD 0.017
3000 : USD 0.0152
9000 : USD 0.0138
21000 : USD 0.013

Specifications

Manufacturer
Leshan Leshan

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SC - 88 SC - 88

Brand Category
Leshan Leshan

Fet Type
2 n channel(dual) 2 n channel(dual)

Drain To Source Voltagevdss
60 V 60 V

Continuous Drain Current Id @ 25°C
115 mA (t C) 115 mA (t C)

Vgsth Max @ Id
2v @ 250ua 2v @ 250ua

Rds On Max @ Id Vgs
7.5 @ 500ma,10v 7.5 @ 500ma,10v

Power Dissipation-Max Ta
380 mW 380 mW

Drain Source Voltage Vdss
60 V 60 V

Continuous Drain Current Id
115 mA 115 mA

Drain Source On Resistance Rdson@Vgs Id
7.5 Ohms @10V , 500mA 7.5 Ohms @10V , 500mA

Power Dissipation Pd
380 mW 380 mW

Gate Threshold Voltage Vgsth@Id
2 V @250uA 2 V @250uA

Type
2 N - Channel 2 N - Channel

Notes:- Show Stocked Products With Similar Attributes.

L2N7002DW1T1G Alternative Parts

We are delighted to provide the L2N7002DW1T1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the L2N7002DW1T1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio Company?The L2N7002DW1T1G is a Dual N-channel MOSFET with a maximum drain-source Voltage of 60V, a drain current of 115mA (at a temperature of 25degC), a continuous drain current of 500mA, and a threshold voltage of 2V. It also has a low on-resistance of 7.5 Ohio, and is protected by a SuperCharge-88 package. This component is RoHS compliant, and is manufactured by Leshan Radio Company.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
52343 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 20 Multiples : 20	20 : USD 0.0255 200 : USD 0.0201 600 : USD 0.017 3000 : USD 0.0152 9000 : USD 0.0138 21000 : USD 0.013

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