X-On Electronics has gained recognition as a prominent supplier of L2N7002KN3T5G MOSFETs across the USA, India, Europe, Australia, and various other global locations. L2N7002KN3T5G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

L2N7002KN3T5G Leshan

Name: L2N7002KN3T5G
Brand: Leshan
SKU: L2N7002KN3T5G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

L2N7002KN3T5G electronic component of Leshan

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Part No.	L2N7002KN3T5G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET N Trench 60V 320mA 2.5V @ 250uA 1.8 Î© @ 500mA,10V SOT-883 RoHS
Datasheet:	L2N7002KN3T5G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0527 ea
Line Total: USD 1.05

Availability - 9583
Ship by Wed. 19 Mar to Mon. 24 Mar

MOQ: 20 Multiples: 20
Pack Size: 20

L2N7002KN3T5G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

9583

Ship by Wed. 19 Mar to Mon. 24 Mar

MOQ : 20
Multiples : 20

20 : USD 0.0527
200 : USD 0.0411
600 : USD 0.0298
2000 : USD 0.024
10000 : USD 0.0214
20000 : USD 0.02
40000 : USD 0.0197

Specifications

Manufacturer

Leshan Leshan

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 883 SOT - 883

Brand Category

Leshan Leshan

Fet Type

n trench n trench

Drain To Source Voltagevdss

60 V 60 V

Continuous Drain Current Id @ 25°C

320 mA 320 mA

Vgsth Max @ Id

2.5 V @ 250ua 2.5 V @ 250ua

Rds On Max @ Id Vgs

1.8 @ 500ma,10v 1.8 @ 500ma,10v

Power Dissipation-Max Ta

250 mW 250 mW

Drain Source Voltage Vdss

60 V 60 V

Continuous Drain Current Id

320 mA 320 mA

Power Dissipation Pd

250 mW 250 mW

Drain Source On Resistance Rdson@Vgs Id

1.8 Ohms @10V , 500mA 1.8 Ohms @10V , 500mA

Gate Threshold Voltage Vgsth@Id

2.5 V @250uA 2.5 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

L2N7002KN3T5G Alternative Parts

We are delighted to provide the L2N7002KN3T5G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the L2N7002KN3T5G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio CompanyThe L2N7002KN3T5G is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) manufactured by Leshan Radio Company. It features a Trench MOSFET structure, 60V drain-source voltage capability, and a maximum on-state resistance of 1.8Ohms. This MOSFET has a maximum drain current of 320mA and can operate down to 2.5V with a low drain-source on-state current of 250uA. Packaged within a SOT-883 form factor, this device is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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