X-On Electronics has gained recognition as a prominent supplier of L2N7002LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. L2N7002LT1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

L2N7002LT1G Leshan

Name: L2N7002LT1G
Brand: Leshan
SKU: L2N7002LT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

L2N7002LT1G electronic component of Leshan

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See Product Specifications

Part No.	L2N7002LT1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET N Trench 60V 2V @ 250uA 7.5 Î© @ 500mA,10V SOT-23 (SOT-23-3) RoHS
Datasheet:	L2N7002LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0142 ea
Line Total: USD 0.71

Availability - 69366
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 50 Multiples: 50
Pack Size: 50

L2N7002LT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

69366

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 50
Multiples : 50

50 : USD 0.0142
500 : USD 0.0112
3000 : USD 0.0096
6000 : USD 0.0085
24000 : USD 0.0077
51000 : USD 0.0073

Specifications

Manufacturer
Leshan Leshan

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Leshan Leshan

Fet Type
n trench n trench

Drain To Source Voltagevdss
60 V 60 V

Vgsth Max @ Id
2v @ 250ua 2v @ 250ua

Rds On Max @ Id Vgs
7.5 @ 500ma,10v 7.5 @ 500ma,10v

Power Dissipation-Max Ta
300 mW 300 mW

Drain Source Voltage Vdss
60 V 60 V

Continuous Drain Current Id
- -

Power Dissipation Pd
300 mW 300 mW

Drain Source On Resistance Rdson@Vgs Id
7.5 Ohms @10V , 500mA 7.5 Ohms @10V , 500mA

Gate Threshold Voltage Vgsth@Id
2 V @250uA 2 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

L2N7002LT1G Alternative Parts

We are delighted to provide the L2N7002LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the L2N7002LT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio:The Leshan Radio L2N7002LT1G is a SOT-23-3 MOSFET N-Trench 60V 2V @ 250uA 7.5 Î© @ 500mA, 10V RoHS manufactured part. It is designed for Power MOSFET applications featuring high integration and fast switching speed. The device has high surge current capability and superior gate charge characteristics with low RDSON and low gate charge. Its low input capacitance and high breakdown voltage provide excellent protection for high frequency applications. The device is RoHS compliant and is designed to meet the latest environmental safety standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Leshan Radio may also be referenced as

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Availability	Price	Buy Price	Quantity
69366 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 50 Multiples : 50	50 : USD 0.0142 500 : USD 0.0112 3000 : USD 0.0096 6000 : USD 0.0085 24000 : USD 0.0077 51000 : USD 0.0073

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