X-On Electronics has gained recognition as a prominent supplier of LBC847BDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LBC847BDW1T1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LBC847BDW1T1G Leshan

Name: LBC847BDW1T1G
Brand: Leshan
SKU: LBC847BDW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LBC847BDW1T1G electronic component of Leshan

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See Product Specifications

Part No.	LBC847BDW1T1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-363 RoHS
Datasheet:	LBC847BDW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0333 ea
Line Total: USD 0.67

Availability - 33225
Ship by Thu. 12 Dec to Tue. 17 Dec

MOQ: 20 Multiples: 20
Pack Size: 20

LBC847BDW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

33225

Ship by Thu. 12 Dec to Tue. 17 Dec

MOQ : 20
Multiples : 20

20 : USD 0.0333
200 : USD 0.0275
600 : USD 0.0243
3000 : USD 0.0214
9000 : USD 0.0196
21000 : USD 0.0188

Specifications

Manufacturer
Leshan Leshan

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Brand
Leshan Leshan

Rohs
Y Y

Package
SOT - 363 SOT - 363

Transistor Type
2 NPN(Double) 2 NPN(Double)

Current - Collector Ic Max
100 mA 100 mA

Voltage - Collector Emitter Breakdown Max
45 V 45 V

Power - Max
380 mW 380 mW

Collector Cut-Off Current Icbo
15 nA 15 nA

Collector-Emitter Breakdown Voltage Vceo
45 V 45 V

Power Dissipation Pd
380 mW 380 mW

Collector Current Ic
100 mA 100 mA

Dc Current Gain Hfe@Ic Vce
180@2 mA , 5V 180@2 mA , 5V

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
600 mV @100 mA , 5 mA 600 mV @100 mA , 5 mA

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LBC847BDW1T1G Alternative Parts

We are delighted to provide the LBC847BDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBC847BDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

RadioThe LBC847BDW1T1G is a SOT-363 PNP (NPN) bipolar transistor manufactured by Leshan Radio Company. It is RoHS compliant and has a maximum collector current of 250 mA and a maximum power dissipation of 600 mW. It has a collector-emitter voltage of 40 V and a collector-base voltage of 60 V. It features a grounded emitter configuration, which provides superior thermal stability and reliable operation over a wide range of temperatures. The package is lead-free and ideal for space-constrained applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
33225 Ship by Thu. 12 Dec to Tue. 17 Dec MOQ : 20 Multiples : 20	20 : USD 0.0333 200 : USD 0.0275 600 : USD 0.0243 3000 : USD 0.0214 9000 : USD 0.0196 21000 : USD 0.0188

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