X-On Electronics has gained recognition as a prominent supplier of LBC857BDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LBC857BDW1T1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LBC857BDW1T1G Leshan

Name: LBC857BDW1T1G
Brand: Leshan
SKU: LBC857BDW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LBC857BDW1T1G electronic component of Leshan

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See Product Specifications

Part No.	LBC857BDW1T1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-363 RoHS
Datasheet:	LBC857BDW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0305 ea
Line Total: USD 0.61

Availability - 22695
Ship by Mon. 09 Dec to Thu. 12 Dec

MOQ: 20 Multiples: 20
Pack Size: 20

LBC857BDW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

22695

Ship by Mon. 09 Dec to Thu. 12 Dec

MOQ : 20
Multiples : 20

20 : USD 0.0305
200 : USD 0.0247
600 : USD 0.0216
3000 : USD 0.019
9000 : USD 0.0173
21000 : USD 0.0164

Specifications

Manufacturer
Leshan Leshan

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT - 363 SOT - 363

Brand Category
Leshan Leshan

Collector Cut-Off Current Icbo
15 nA 15 nA

Collector-Emitter Breakdown Voltage Vceo
45 V 45 V

Power Dissipation Pd
380 mW 380 mW

Collector Current Ic
100 mA 100 mA

Dc Current Gain Hfe@Ic Vce
290@2 mA , 5V 290@2 mA , 5V

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
650 mV @100 mA , 5 mA 650 mV @100 mA , 5 mA

Transistor Type
2PCSPNP 2PCSPNP

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LBC857BDW1T1G Alternative Parts

We are delighted to provide the LBC857BDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBC857BDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LBC857BDW1T1G is a surface-mount Transistor manufactured by Leshan Radio Company. It is an NPN Transistor packaged in a SOT-363 RoHS compliant package. The LBC857BDW1T1G is designed for general purpose amplifying and switching applications, and is rated up to 500 mA with a 150 mW power dissipation. It features a Collector-Base voltage of 60 V, and a Collector-Emitter voltage of 40 V. It has a high current gain (Beta) of 250, making it an excellent choice for high gain, wide band amplifier applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
22695 Ship by Mon. 09 Dec to Thu. 12 Dec MOQ : 20 Multiples : 20	20 : USD 0.0305 200 : USD 0.0247 600 : USD 0.0216 3000 : USD 0.019 9000 : USD 0.0173 21000 : USD 0.0164

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