X-On Electronics has gained recognition as a prominent supplier of LBC857CLT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LBC857CLT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LBC857CLT1G Leshan

Name: LBC857CLT1G
Brand: Leshan
SKU: LBC857CLT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LBC857CLT1G electronic component of Leshan

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See Product Specifications

Part No.	LBC857CLT1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 100mA 45V SOT-23 (SOT-23-3) RoHS
Datasheet:	LBC857CLT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0171 ea
Line Total: USD 0.34

Availability - 1678
Ship by Fri. 13 Dec to Wed. 18 Dec

MOQ: 20 Multiples: 20
Pack Size: 20

LBC857CLT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1678

Ship by Fri. 13 Dec to Wed. 18 Dec

MOQ : 20
Multiples : 20

20 : USD 0.0171
200 : USD 0.014
600 : USD 0.0122
3000 : USD 0.0112
9000 : USD 0.0103
21000 : USD 0.0097

Specifications

Manufacturer
Leshan Leshan

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Leshan Leshan

Transistor Type
pnp pnp

Current - Collector Ic Max
100 mA 100 mA

Voltage - Collector Emitter Breakdown Max
45 V 45 V

Power - Max
300 mW 300 mW

Collector Cut-Off Current Icbo
15 nA 15 nA

Collector-Emitter Breakdown Voltage Vceo
45 V 45 V

Power Dissipation Pd
300 mW 300 mW

Collector Current Ic
100 mA 100 mA

Dc Current Gain Hfe@Ic Vce
520@2 mA , 5V 520@2 mA , 5V

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
650 mV @100 mA , 5 mA 650 mV @100 mA , 5 mA

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LBC857CLT1G Alternative Parts

We are delighted to provide the LBC857CLT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBC857CLT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LBC857CLT1G is a PNP type transistor manufactured by Leshan Radio Company, and is capable of handling up to 100mA of current at 45V in a SOT-23-3 package. This transistor meets RoHS standards, meaning it is free of hazardous substances, making it a great choice for environmental safety. The device can be used in a wide range of applications, such as switching, signal or power amplification.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
1678 Ship by Fri. 13 Dec to Wed. 18 Dec MOQ : 20 Multiples : 20	20 : USD 0.0171 200 : USD 0.014 600 : USD 0.0122 3000 : USD 0.0112 9000 : USD 0.0103 21000 : USD 0.0097

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