X-On Electronics has gained recognition as a prominent supplier of LBSS260DW1T1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LBSS260DW1T1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LBSS260DW1T1G Leshan

Name: LBSS260DW1T1G
Brand: Leshan
SKU: LBSS260DW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LBSS260DW1T1G electronic component of Leshan

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See Product Specifications

Part No.	LBSS260DW1T1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET 2 N Channel (Dual) 60V 200mA 1V @ 250uA 1.44 Î© @ 500mA,10V SC-88 RoHS
Datasheet:	LBSS260DW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0413 ea
Line Total: USD 0.41

Availability - 1606
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 10 Multiples: 10
Pack Size: 10

LBSS260DW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1606

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 10
Multiples : 10

10 : USD 0.0413
100 : USD 0.0329
300 : USD 0.0289
3000 : USD 0.0258
6000 : USD 0.0232
9000 : USD 0.022

Specifications

Manufacturer

Leshan Leshan

Product Category

MOSFETs MOSFETs

Brand

Leshan Leshan

Rohs

Y Y

Package

SC - 88 SC - 88

Fet Type

2 N Channel(Double) 2 N Channel(Double)

Drain To Source Voltagevdss

60 V 60 V

Continuous Drain Current Id @ 25°C

200 mA 200 mA

Vgsth Max @ Id

1V @ 250uA 1V @ 250uA

Rds On Max @ Id Vgs

1.44O @ 500mA,10V 1.44O @ 500mA,10V

Power Dissipation-Max Ta 25°C

380 mW 380 mW

Drain Source Voltage Vdss

60 V 60 V

Continuous Drain Current Id

200 mA 200 mA

Power Dissipation Pd

380 mW 380 mW

Drain Source On Resistance Rdson@Vgs Id

1.44 Ohms @10V , 500mA 1.44 Ohms @10V , 500mA

Gate Threshold Voltage Vgsth@Id

1 V @250uA 1 V @250uA

Type

2 N - Channel 2 N - Channel

Notes:- Show Stocked Products With Similar Attributes.

LBSS260DW1T1G Alternative Parts

We are delighted to provide the LBSS260DW1T1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBSS260DW1T1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio CompanyThe LBSS260DW1T1G is a dual N-channel MOSFET manufactured by Leshan Radio Company. It has a maximum of voltage of 60V, continuous drain current of 200mA, threshold voltage of 1V at 250uA, on resistance of 1.44Î© at 500mA, gate-source voltage of 10V, and is RoHS compliant. This device is ideal for high voltage switching applications, like low power motor drivers, power management controllers, and general purpose power switching.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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1606 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 10 Multiples : 10	10 : USD 0.0413 100 : USD 0.0329 300 : USD 0.0289 3000 : USD 0.0258 6000 : USD 0.0232 9000 : USD 0.022

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