X-On Electronics has gained recognition as a prominent supplier of LBSS8402DW1T1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LBSS8402DW1T1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LBSS8402DW1T1G Leshan

Name: LBSS8402DW1T1G
Brand: Leshan
SKU: LBSS8402DW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LBSS8402DW1T1G electronic component of Leshan

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See Product Specifications

Part No.	LBSS8402DW1T1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET N & P Trench 50V 130mA 1.5V @ 1mA,2V @ 250uA 3.5 Î© @ 200mA,5V;10 Î© @ 100mA,5V SC-88 RoHS
Datasheet:	LBSS8402DW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0558 ea
Line Total: USD 0.56

Availability - 8358
Ship by Mon. 09 Dec to Thu. 12 Dec

MOQ: 10 Multiples: 10
Pack Size: 10

LBSS8402DW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

8358

Ship by Mon. 09 Dec to Thu. 12 Dec

MOQ : 10
Multiples : 10

10 : USD 0.0558
100 : USD 0.0462
300 : USD 0.0416
3000 : USD 0.0379
6000 : USD 0.0352
9000 : USD 0.0339

Specifications

Manufacturer
Leshan Leshan

Product Category
MOSFETs MOSFETs

Brand
Leshan Leshan

Rohs
Y Y

Package
SC - 88 SC - 88

Fet Type
N amp; P Channel N amp; P Channel

Drain To Source Voltagevdss
50 V 50 V

Continuous Drain Current Id @ 25°C
130 mA 130 mA

Vgsth Max @ Id
1.5V @ 1mA,2V @ 250uA 1.5V @ 1mA,2V @ 250uA

Rds On Max @ Id Vgs
3.5O @ 200mA,5V;10O @ 100mA,5V 3.5O @ 200mA,5V;10O @ 100mA,5V

Power Dissipation-Max Ta 25°C
380 mW 380 mW

Drain Source Voltage Vdss
50 V 50 V

Continuous Drain Current Id
130 mA 130 mA

Drain Source On Resistance Rdson@Vgs Id
- -

Power Dissipation Pd
380 mW 380 mW

Gate Threshold Voltage Vgsth@Id
1.5 V @1 mA 1.5 V @1 mA

Reverse Transfer Capacitance Crss@Vds
3 pF @25V 3 pF @25V

Type
1PCSN - Channelamp;1PCSP - Channel 1PCSN - Channelamp;1PCSP - Channel

Input Capacitance Ciss@Vds
42 pF @25V 42 pF @25V

Total Gate Charge Qg@Vgs
- -

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LBSS8402DW1T1G Alternative Parts

We are delighted to provide the LBSS8402DW1T1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LBSS8402DW1T1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio CompanyThe LBSS8402DW1T1G is a MOSFET N & P Trench device manufactured by the Leshan Radio Company. It is designed for 50V, 130mA of continuous drain current with 1.5 V @1 mA, 2 V @ 250uA, 3.5 Î© @ 200mA, 5V ; 10 Î©@ 100mA, 5V and is RoHS compliant. It comes in an SC-88 package and is suitable for switching frequencies up to 50 kHz.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Leshan Radio may also be referenced as

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Availability	Price	Buy Price	Quantity
8358 Ship by Mon. 09 Dec to Thu. 12 Dec MOQ : 10 Multiples : 10	10 : USD 0.0558 100 : USD 0.0462 300 : USD 0.0416 3000 : USD 0.0379 6000 : USD 0.0352 9000 : USD 0.0339

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