X-On Electronics has gained recognition as a prominent supplier of LH8050QLT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LH8050QLT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LH8050QLT1G Leshan

Name: LH8050QLT1G
Brand: Leshan
SKU: LH8050QLT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LH8050QLT1G electronic component of Leshan

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See Product Specifications

Part No.	LH8050QLT1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 1.5A 50V SOT-23 (SOT-23-3) RoHS
Datasheet:	LH8050QLT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0185 ea
Line Total: USD 0.92

Availability - 89792
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 50 Multiples: 50
Pack Size: 50

LH8050QLT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

89792

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 50
Multiples : 50

50 : USD 0.0185
500 : USD 0.0146
3000 : USD 0.0124
6000 : USD 0.0111
24000 : USD 0.01
51000 : USD 0.0094

Specifications

Manufacturer
Leshan Leshan

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Leshan Leshan

Transistor Type
npn npn

Current - Collector Ic Max
1.5 A 1.5 A

Voltage - Collector Emitter Breakdown Max
50 V 50 V

Power - Max
225 mW 225 mW

Collector Cut-Off Current Icbo
100 nA 100 nA

Collector-Emitter Breakdown Voltage Vceo
50 V 50 V

Power Dissipation Pd
225 mW 225 mW

Collector Current Ic
1.5 A 1.5 A

Dc Current Gain Hfe@Ic Vce
- -

Transition Frequency Ft
- -

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
500 mV @800 mA , 80 mA 500 mV @800 mA , 80 mA

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LH8050QLT1G Alternative Parts

We are delighted to provide the LH8050QLT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LH8050QLT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LH8050QLT1G is a three-pin NPN bipolar junction transistor (BJT) manufactured by Leshan Radio Company. It has a current rating of 1.5A, and is rated for 50V. The transistor is packaged using a SOT-23-3 package, which is a small-outline plastic package with leads that conform to the lead widths of the JEDEC standard. The LH8050QLT1G is compliant with the Restriction of Hazardous Substances (RoHS) directive.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
89792 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 50 Multiples : 50	50 : USD 0.0185 500 : USD 0.0146 3000 : USD 0.0124 6000 : USD 0.0111 24000 : USD 0.01 51000 : USD 0.0094

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