X-On Electronics has gained recognition as a prominent supplier of LMBT2222ALT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LMBT2222ALT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LMBT2222ALT1G Leshan

Name: LMBT2222ALT1G
Brand: Leshan
SKU: LMBT2222ALT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LMBT2222ALT1G electronic component of Leshan

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See Product Specifications

Part No.	LMBT2222ALT1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 600mA 40V SOT-23 (SOT-23-3) RoHS
Datasheet:	LMBT2222ALT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0146 ea
Line Total: USD 0.73

Availability - 1712
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 50 Multiples: 50
Pack Size: 50

LMBT2222ALT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1712

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 50
Multiples : 50

50 : USD 0.0146
500 : USD 0.0115
3000 : USD 0.0097
6000 : USD 0.0086
24000 : USD 0.0078
51000 : USD 0.0073

Specifications

Manufacturer
Leshan Leshan

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Leshan Leshan

Transistor Type
npn npn

Current - Collector Ic Max
600 mA 600 mA

Voltage - Collector Emitter Breakdown Max
40 V 40 V

Power - Max
225 mW 225 mW

Collector Cut-Off Current Icbo
10 nA 10 nA

Collector-Emitter Breakdown Voltage Vceo
40 V 40 V

Power Dissipation Pd
225 mW 225 mW

Collector Current Ic
600 mA 600 mA

Dc Current Gain Hfe@Ic Vce
100@150 mA , 10V 100@150 mA , 10V

Transition Frequency Ft
300MHz 300MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
1 V @500 mA , 50 mA 1 V @500 mA , 50 mA

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LMBT2222ALT1G Alternative Parts

We are delighted to provide the LMBT2222ALT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LMBT2222ALT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LMBT2222ALT1G is a SOT-23-3 NPN transistor manufactured by Leshan Radio Company. It has a rating of 600mA at 40V. It is RoHS compliant and is SOT-23-3 compliant. The LMBT2222ALT1G is an NPN transistor, which means it has three leads (collector, base and emitter), open collector and low gain. It can be used for amplifying, switching, voltage regulation, low current-controlled and protection applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1712 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 50 Multiples : 50	50 : USD 0.0146 500 : USD 0.0115 3000 : USD 0.0097 6000 : USD 0.0086 24000 : USD 0.0078 51000 : USD 0.0073

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