X-On Electronics has gained recognition as a prominent supplier of LMBT5401DW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LMBT5401DW1T1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LMBT5401DW1T1G Leshan

Name: LMBT5401DW1T1G
Brand: Leshan
SKU: LMBT5401DW1T1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LMBT5401DW1T1G electronic component of Leshan

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See Product Specifications

Part No.	LMBT5401DW1T1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 500mA 150V SC-70-6 (SOT-363) RoHS
Datasheet:	LMBT5401DW1T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0372 ea
Line Total: USD 0.74

Availability - 1843
Ship by Fri. 13 Dec to Wed. 18 Dec

MOQ: 20 Multiples: 20
Pack Size: 20

LMBT5401DW1T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1843

Ship by Fri. 13 Dec to Wed. 18 Dec

MOQ : 20
Multiples : 20

20 : USD 0.0372
200 : USD 0.03
600 : USD 0.0259
3000 : USD 0.0235
9000 : USD 0.0215
21000 : USD 0.0204

Specifications

Manufacturer
Leshan Leshan

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SC - 70 - 6 (SOT - 363) SC - 70 - 6 (SOT - 363)

Brand Category
Leshan Leshan

Transistor Type
pnp pnp

Current - Collector Ic Max
500 mA 500 mA

Voltage - Collector Emitter Breakdown Max
150 V 150 V

Power - Max
300 mW 300 mW

Collector Cut-Off Current Icbo
50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo
150 V 150 V

Power Dissipation Pd
300 mW 300 mW

Collector Current Ic
500 mA 500 mA

Dc Current Gain Hfe@Ic Vce
60@10 mA , 5V 60@10 mA , 5V

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
500 mV @50 mA , 5 mA 500 mV @50 mA , 5 mA

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LMBT5401DW1T1G Alternative Parts

We are delighted to provide the LMBT5401DW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LMBT5401DW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio Company The LMBT5401DW1T1G is a PNP-type transistor manufactured by the Leshan Radio Company. It is housed in a SC-70-6 package, which is a surface-mount package in the SOT-363 form factor. The transistor has a collector-emitter voltage of up to 150V, and a maximum continuous collector current of 500mA. It is compliant with the RoHS directive, indicating that it is free from hazardous substances.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
1843 Ship by Fri. 13 Dec to Wed. 18 Dec MOQ : 20 Multiples : 20	20 : USD 0.0372 200 : USD 0.03 600 : USD 0.0259 3000 : USD 0.0235 9000 : USD 0.0215 21000 : USD 0.0204

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