X-On Electronics has gained recognition as a prominent supplier of LMBTA06LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LMBTA06LT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LMBTA06LT1G Leshan

Name: LMBTA06LT1G
Brand: Leshan
SKU: LMBTA06LT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LMBTA06LT1G electronic component of Leshan

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See Product Specifications

Part No.	LMBTA06LT1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 500mA 80V SOT-23 (SOT-23-3) RoHS
Datasheet:	LMBTA06LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0268 ea
Line Total: USD 1.34

Availability - 24201
Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ: 50 Multiples: 50
Pack Size: 50

LMBTA06LT1G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

24201

Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ : 50
Multiples : 50

50 : USD 0.0268
500 : USD 0.0208
3000 : USD 0.0128
6000 : USD 0.0112
24000 : USD 0.0099
51000 : USD 0.0092

Specifications

Manufacturer

Leshan Leshan

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

Leshan Leshan

Transistor Type

npn npn

Current - Collector Ic Max

500 mA 500 mA

Voltage - Collector Emitter Breakdown Max

80 V 80 V

Power - Max

225 mW 225 mW

Collector Cut-Off Current Icbo

100 nA 100 nA

Collector-Emitter Breakdown Voltage Vceo

80 V 80 V

Power Dissipation Pd

225 mW 225 mW

Collector Current Ic

500 mA 500 mA

Dc Current Gain Hfe@Ic Vce

100@100 mA , 1V 100@100 mA , 1V

Transition Frequency Ft

100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

250 mV @100 mA , 10 mA 250 mV @100 mA , 10 mA

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LMBTA06LT1G Alternative Parts

We are delighted to provide the LMBTA06LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LMBTA06LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LMBTA06LT1G is a NPN type transistor manufactured by Leshan Radio Company. It has a maximum collector current of 500 mA and a maximum collector-emitter voltage of 80V. It is housed in a SOT-23-3 package and is RoHS compliant. This transistor is suitable for applications like amplifier circuits, switching circuits, and relay drivers. It is also commonly used in power management applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
24201 Ship by Fri. 14 Feb to Wed. 19 Feb MOQ : 50 Multiples : 50	50 : USD 0.0268 500 : USD 0.0208 3000 : USD 0.0128 6000 : USD 0.0112 24000 : USD 0.0099 51000 : USD 0.0092

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