X-On Electronics has gained recognition as a prominent supplier of LP2307LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LP2307LT1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LP2307LT1G Leshan

Name: LP2307LT1G
Brand: Leshan
SKU: LP2307LT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LP2307LT1G electronic component of Leshan

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See Product Specifications

Part No.	LP2307LT1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET P Channel 16V 4.7A 1.4V @ 250uA 70mO @ 4.7A,4.5V SOT-23(SOT-23-3) RoHS
Datasheet:	LP2307LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0541 ea
Line Total: USD 0.54

Availability - 124
Ship by Mon. 06 Jan to Thu. 09 Jan

MOQ: 10 Multiples: 10
Pack Size: 10

LP2307LT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

124

Ship by Mon. 06 Jan to Thu. 09 Jan

MOQ : 10
Multiples : 10

10 : USD 0.0541
100 : USD 0.045
300 : USD 0.0403
3000 : USD 0.0366
6000 : USD 0.0339
9000 : USD 0.0325

Specifications

Manufacturer
Leshan Leshan

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Leshan Leshan

Fet Type
P Channel P Channel

Drain To Source Voltagevdss
16 V 16 V

Continuous Drain Current Id @ 25°C
4.7 A 4.7 A

Vgsth Max @ Id
1.4V @ 250uA 1.4V @ 250uA

Rds On Max @ Id Vgs
70mO @ 4.7A,4.5V 70mO @ 4.7A,4.5V

Power Dissipation-Max Ta 25°C
1.1 W 1.1 W

Drain Source Voltage Vdss
16 V 16 V

Continuous Drain Current Id
4.7 A 4.7 A

Drain Source On Resistance Rdson@Vgs Id
70 mOhms @4.5V , 4.7A 70 mOhms @4.5V , 4.7A

Power Dissipation Pd
1.1 W 1.1 W

Gate Threshold Voltage Vgsth@Id
1.4 V @250uA 1.4 V @250uA

Type
P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

LP2307LT1G Alternative Parts

We are delighted to provide the LP2307LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LP2307LT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio CompanyThe LP2307LT1G is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a channel voltage of 16V, a maximum gate-source voltage of 4.7A peak and off-state drain current of 250uA. It is a three-pin surface-mount SOT-23 package and has a low RDS (on) of 70mO at 4.7A. It is RoHS compliant and manufactured by Leshan Radio Company.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
124 Ship by Mon. 06 Jan to Thu. 09 Jan MOQ : 10 Multiples : 10	10 : USD 0.0541 100 : USD 0.045 300 : USD 0.0403 3000 : USD 0.0366 6000 : USD 0.0339 9000 : USD 0.0325

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