X-On Electronics has gained recognition as a prominent supplier of LP2309LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LP2309LT1G MOSFETs are a product manufactured by Leshan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LP2309LT1G Leshan

Name: LP2309LT1G
Brand: Leshan
SKU: LP2309LT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LP2309LT1G electronic component of Leshan

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See Product Specifications

Part No.	LP2309LT1G
Manufacturer:	Leshan
Category:	MOSFETs
Description:	MOSFET P Trench 60V 1.9A 3V @ 250uA 215 mÎ© @ 1.8A,10V SOT-23 (TO-236) RoHS
Datasheet:	LP2309LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0835 ea
Line Total: USD 0.84

Availability - 16418
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 10 Multiples: 10
Pack Size: 10

LP2309LT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

16418

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 10
Multiples : 10

10 : USD 0.0835
100 : USD 0.0691
300 : USD 0.0618
3000 : USD 0.0563
6000 : USD 0.0521
9000 : USD 0.0498

Specifications

Manufacturer
Leshan Leshan

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT - 23 (TO - 236) SOT - 23 (TO - 236)

Brand Category
Leshan Leshan

Fet Type
p trench p trench

Drain To Source Voltagevdss
60 V 60 V

Continuous Drain Current Id @ 25°C
1.9 A 1.9 A

Vgsth Max @ Id
3v @ 250ua 3v @ 250ua

Rds On Max @ Id Vgs
215 m @ 1.8a,10v 215 m @ 1.8a,10v

Power Dissipation-Max Ta
1.4 W 1.4 W

Drain Source Voltage Vdss
60 V 60 V

Continuous Drain Current Id
1.9 A 1.9 A

Power Dissipation Pd
1.4 W 1.4 W

Drain Source On Resistance Rdson@Vgs Id
215 mOhms @10V , 1.8A 215 mOhms @10V , 1.8A

Gate Threshold Voltage Vgsth@Id
3 V @250uA 3 V @250uA

Type
P Channel P Channel

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We are delighted to provide the LP2309LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LP2309LT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

Radio CompanyThe LP2309LT1G MOSFET P Trench 60V 1.9A 3V@250uA 215 mÎ©@1.8A,10V SOT-23(TO-236) RoHS is a small and efficient surface mount transistor manufactured by Leshan Radio Company. It has a maximum Vds of 60V, a maximum Id of 1.9A and a maximum Rds(on) of 215mÎ© with a gate threshold voltage of 3V and a gate-source leakage current of 250uA @ 10V. Additionally, this part is RoHS compliant. This MOSFET is housed in a SOT-23 (TO-236) package, and is suitable for use in a variety of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Leshan Radio may also be referenced as

LRC

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Availability	Price	Buy Price	Quantity
16418 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 10 Multiples : 10	10 : USD 0.0835 100 : USD 0.0691 300 : USD 0.0618 3000 : USD 0.0563 6000 : USD 0.0521 9000 : USD 0.0498

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