X-On Electronics has gained recognition as a prominent supplier of PH2729-65M RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. PH2729-65M RF Bipolar Transistors are a product manufactured by MACOM. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

PH2729-65M MACOM

PH2729-65M electronic component of MACOM
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Part No.PH2729-65M
Manufacturer: MACOM
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors
Datasheet: PH2729-65M Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 631.301 ea
Line Total: USD 12626.02 
Availability - 0
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 20
Multiples : 20
20 : USD 631.301

   
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We are delighted to provide the PH2729-65M from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PH2729-65M and other electronic components in the RF Bipolar Transistors category and beyond.

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PH2729-65M Radar Pulsed Power Transistor Rev. V2 65W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25C Parameter Sym- Rating Units bol Collector-Emitter Volt- V 65 V CES age Emitter-Base Voltage V 3.0 V EBO Collector Current (Peak) I 8.0 A C Power Dissipation P 330 W TOT +25C Storage Temperature T -65 to C STG +200 Junction Temperature T 200 C J Electrical Specifications: T = 25 5C (Room Ambient ) C Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I = 50mA BV 65 - V C CES Collector-Emitter Leakage Current V = 36V I - 7.5 mA CE CES Thermal Resistance Vcc = 36V, Pout = 65W F = 2.7, 2.8, 2.9 GHz R - 0.45 C/W TH(JC) Input Power Vcc = 36V, Pout = 65W F = 2.7, 2.8, 2.9 GHz P - 9.0 W IN Power Gain Vcc = 36V, Pout = 65W F = 2.7, 2.8, 2.9 GHz G 8.5 - dB P Collector Efficiency Vcc = 36V, Pout = 65W F = 2.7, 2.8, 2.9 GHz 40 - % C Input Return Loss Vcc = 36V, Pout = 65W F = 2.7, 2.8, 2.9 GHz RL - -9 dB Load Mismatch Tolerance Vcc = 36V, Pout = 65W F = 2.7, 2.8, 2.9 GHz VSWR-T - 2:1 - Load Mismatch Stability Vcc = 36V, Pout = 65W F = 2.7, 2.8, 2.9 GHz VSWR-S - 1.5:1 - 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: PH2729-65M Radar Pulsed Power Transistor Rev. V2 65W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Typical RF Performance Freq. Pin Pout Ic Eff RL VSWR-S VSWR-T Gain (dB) (GHz) (W) (W) (A) (%) (dB) (1.5:1) (2:1) 2.7 6.7 65 9.88 4.20 43.1 -15.5 S P 2.8 6.2 65 10.20 3.84 47.0 -17.9 S P 2.9 6.6 65 9.93 3.83 47.1 -12.4 S P Gain vs. Frequency Collector Efficiency vs. Frequency 10.5 55 10.0 50 9.5 45 9.0 40 8.5 35 2.70 2.75 2.80 2.85 2.90 2.70 2.75 2.80 2.85 2.90 Freq (GHz) Freq (GHz) RF Test Fixture Impedance F (GHz) Z () Z () IF OF 2.7 7.8 - j8.3 9.3 - j8.9 2.8 7.3 - j6.7 9.0 - j8.4 2.9 7.2 - j5.0 8.6 - j8.0 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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M/A-COM
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MA/COM
MACOM
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