MME60R290P Datasheet
MME60R290P
600V 0.29 N-channel MOSFET
Description
MME60R290P is power MOSFET using magnachip s advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Package & Internal Circuit
Parameter Value Unit
D
V @ T 650 V
DS j,max
D
R 0.29
DS(on),max
V 3 V
TH,typ
G
I 13 A
D
G
Q 32 nC
g,typ
S
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code Marking Temp. Range Package Packing RoHS Status
TO-263
MME60R290PRH 60R290P -55 ~ 150 Reel Halogen Free
2
(D PAK)
1
Apr. 2014 Revision 1.0 MagnaChip Semiconductor Ltd.
MME60R290P Datasheet
Absolute Maximum Rating (T =25 unless otherwise specified)
c
Parameter Symbol Rating Unit Note
Drain Source voltage V 600 V
DSS
Gate Source voltage V 30 V
GSS
13 A T =25
C
Continuous drain current I
D
8.3 A T =100
C
(1)
Pulsed drain current I 39 A
DM
Power dissipation P 104 W
D
Single - pulse avalanche energy E 284 mJ
AS
MOSFET dv/dt ruggedness dv/dt 50 V/ns
Diode dv/dt ruggedness dv/dt 15 V/ns
Storage temperature T -55 ~150
stg
Maximum operating junction
T 150
j
temperature
1) Pulse width t limited by T
P j,max
2) I I , V V
SD D DS peak (BR)DSS
Thermal Characteristics
Parameter Symbol Value Unit
Thermal resistance, junction-case max R 1.2 /W
thjc
Thermal resistance, junction-ambient max R 62.5 /W
thja
2
Apr. 2014 Revision 1.0 MagnaChip Semiconductor Ltd.