X-On Electronics has gained recognition as a prominent supplier of APL501J MOSFETs across the USA, India, Europe, Australia, and various other global locations. APL501J MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

APL501J Microchip

APL501J electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.APL501J
Manufacturer: Microchip
Category: MOSFETs
Description: MOSFET FG, MOSFET, 500V, 0.12_OHM, SOT-227
Datasheet: APL501J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 80.37 ea
Line Total: USD 803.7 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 80.37
25 : USD 74.574
50 : USD 72.4788
100 : USD 64.8324

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 10
Multiples : 10
10 : USD 56.518

   
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We are delighted to provide the APL501J from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APL501J and other electronic components in the MOSFETs category and beyond.

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D G APL501J 500V 43.0A 0.12 S ISOTOPUL Recognize File No. E145592 (S) SINGLE DIE ISOTOP PACKAGE POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter UNIT APL501J V Drain-Source Voltage Volts DSS 500 I Continuous Drain Current T = 25C D C 43 Amps 1 I , l Pulsed Drain Current and Inductive Current Clamped DM LM 172 V Gate-Source Voltage Volts GS 30 Total Power Dissipation T = 25C Watts C 520 P D Linear Derating Factor W/C 4.16 T ,T Operating and Storage Junction Temperature Range J STG -55 to 150 C T Lead Temperature: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500 Volts DSS GS D 2 I (ON) On State Drain Current (V > I (ON) x R (ON) Max, V = 8V) Amps 43 D DS D DS GS 2 R (ON) Drain-Source On-State Resistance (V = 10V, 0.5 I Cont. ) Ohms 0.12 DS GS D Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS V (TH) Gate Threshold Voltage (V = V , I = 2.5mA) 24 Volts GS DS GS D THERMAL CHARACTERISTICS Characteristic Symbol MIN TYP MAX UNIT R Junction to Case 0.28 JC C/W 40 R Junction to Ambient JA RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Volts V 2500 Isolation Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lbin CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APL501J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 6040 7300 V = 0V iss GS C Output Capacitance V = 25V 1220 1710 oss pF DS C f = 1 MHz Reverse Transfer Capacitance 510 770 rss t (on) Turn-on Delay Time 13 26 V = 15V d GS t Rise Time V = 0.5 V 20 40 ns r DD DSS I = I Cont. 25C t (off) Turn-off Delay Time 54 81 D D d R = 0.6 t Fall Time G 11 20 f SAFE OPERATING AREA CHARACTERISTICS UNIT Symbol Test Conditions / Part Number MIN TYP MAX Characteristic V = 400 V, I = 0.813A, t = 20 sec., T = 60C Watts SOA1 Safe Operating Area 325 DS DS C 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.3 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.01 0.02 t 1 0.005 t 0.01 2 t 1 Duty Factor D = / t 2 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 80 80 9 V V =10, 12, 14 & 16V V =9V, 10V, 12V, 14 & 16V GS GS 8 V 8 V 60 60 7 V 7 V 40 40 6 V 6 V 20 20 5 V 5 V 0 0 0 20406080 100 0 4 8 12 16 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 050-5903 Rev D 2-2002 I , DRAIN CURRENT (AMPERES) Z , THERMAL IMPEDANCE (C/W) D JC I , DRAIN CURRENT (AMPERES) D P DM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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