APT20M36BFLL APT20M36SFLL 200V 65A 0.036 R POWER MOS 7 FREDFET BFLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching 3 D PAK losses are addressed with Power MOS 7 by significantly lowering R TO-247 DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. SFLL Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package G FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20M36BFLL SFLL UNIT V Drain-Source Voltage 200 Volts DSS I Continuous Drain Current T = 25C 65 D C Amps 1 I Pulsed Drain Current 260 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts C 329 P D Linear Derating Factor W/C 2.63 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 65 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 32.5A) 0.036 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 200V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 160V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT20M36BFLL SFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance V = 0V 3080 iss GS V = 25V C pF Output Capacitance 990 DS oss f = 1 MHz C Reverse Transfer Capacitance 70 rss Q 3 Total Gate Charge V = 10V 60 g GS Q V = 100V nC Gate-Source Charge DD 24 gs I = 65A 25C Q D Gate-Drain Mille) Charge 26 gd RESISTIVE SWITCHING t Turn-on Delay Time 9 d(on) V = 15V GS t 37 Rise Time r V = 100V ns DD t Turn-off Delay Time 16 d(off) I = 65A 25C D t R = 1.6 Fall Time 30 f G INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 490 on V = 133V, V = 15V DD GS E Turn-off Switching Energy I = 65A, R = 5 300 off D G J INDUCTIVE SWITCHING 125C E 6 Turn-on Switching Energy 600 on V = 133V V = 15V DD GS E Turn-off Switching Energy I = 65A, R = 5 315 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 65 S Amps I 1 SM Pulsed Source Current (Body Diode) 260 2 V Diode Forward Voltage (V = 0V, I = -65A) Volts SD 1.3 GS S dv / dv 5 V/ns Peak Diode Recovery / 8 dt dt Reverse Recovery Time T = 25C 200 j t ns rr di (I = -65A, / = 100A/s) S dt T = 125C 300 j Reverse Recovery Charge T = 25C 0.7 j C Q rr di (I = -65A, / = 100A/s) S dt T = 125C 2.4 j Peak Recovery Current T = 25C 10 j I Amps RRM di (I = -65A, / = 100A/s) S dt T = 125C 18 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.38 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 0.62mH, R = 25, Peak I = 65A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 65A / 700A/s V 200V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.40 0.9 0.35 0.30 0.7 0.25 0.5 0.20 Note: t 0.15 1 0.3 t 2 0.10 t 1 Duty Factor D = / t 2 0.1 0.05 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7048 Rev C 7-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM