X-On Electronics has gained recognition as a prominent supplier of DN1509N8-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN1509N8-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN1509N8-G Microchip

DN1509N8-G electronic component of Microchip
DN1509N8-G Microchip
DN1509N8-G MOSFETs
DN1509N8-G  Semiconductors

Images are for reference only
See Product Specifications
Part No. DN1509N8-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 90V; 0.3A; 1.6W; SOT89-3
Datasheet: DN1509N8-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0525 ea
Line Total: USD 1.05 
Availability - 5976
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 500
Multiples : 500
500 : USD 0.8825
1000 : USD 0.8775
1500 : USD 0.8738
2000 : USD 0.8688
4000 : USD 0.865

1639
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 56
Multiples : 1
56 : USD 1.1536
57 : USD 1.1358
58 : USD 1.1181
100 : USD 1.1003
250 : USD 1.0825
500 : USD 1.0238
1000 : USD 1.0066

209
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 2.684
10 : USD 1.9266
30 : USD 1.5234
100 : USD 1.3072
500 : USD 1.2093
1000 : USD 1.1661

5976
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 1.0525
10 : USD 1.002
25 : USD 0.87
100 : USD 0.7436
2000 : USD 0.7436

3880
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 500
Multiples : 500
500 : USD 1.0382
1000 : USD 1.0324
1500 : USD 1.028
2000 : USD 1.022
4000 : USD 1.0176

1940
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 2000
Multiples : 2000
2000 : USD 0.8864

1639
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 56
Multiples : 1
56 : USD 1.1536
57 : USD 1.1358
58 : USD 1.1181
100 : USD 1.1003
250 : USD 1.0825
500 : USD 1.0238
1000 : USD 1.0066

   
Manufacturer
Product Category
Case
Mounting
Kind Of Channel
Polarisation
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Gate-Source Voltage
Pulsed Drain Current
Power Dissipation
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We are delighted to provide the DN1509N8-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN1509N8-G and other electronic components in the MOSFETs category and beyond.

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DN1509 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description High-input impedance This low threshold, depletion-mode, normally-on, tran- Low-input capacitance sistor utilizes an advanced vertical Diffusion Metal Fast switching speeds Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This com- Low on-resistance bination produces a device with the power-handling Free from secondary breakdown capabilities of bipolar transistors, plus the high-input Low input and output leakages impedance and positive-temperature coefficient inher- ent in Metal-Oxide Semiconductor (MOS) devices. Applications Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced second- Normally-on switches ary breakdown. Battery operated systems Converters Vertical DMOS Field-Effect Transistors (FETs) are ide- Linear amplifiers ally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high Constant current sources breakdown voltage, high input impedance, low input Telecom capacitance, and fast switching speeds are desired. 2015 Microchip Technology Inc. DS20005403B-page 1DN1509 Package Type SOURCE DRAIN GATE SOURCE N/C DRAIN DRAIN GATE N/C 5-lead SOT-23 TO-243AA (SOT-89) See Table 2-1 for pin information DS20005403B-page 2 2015 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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