MBR30200CTe3/TU Microchip

MBR3040CT to MBR30200CT Schottky Barrier Rectifiers Main product characteristics 2 I 30A (2 x 15A) F(AV) RoHS V 40V to 200V COMPLIANT RRM T 175C j(MAX) 1 2 3 1 2 3 Features and benefits Plastic package with UL 94V-0 flammability classification TO-220AB Flame retardant epoxy molding component Guardring for overvoltage protection Low power loss, high efficiency RoHS compliant (2002/95/EC) Description and applications Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency. (1) Electrical characteristics Unit Symbol Parameter V Max Peak Repetitive Reverse Voltage 40 45 50 60 80 90 100 150 200 V RRM V Max RMS Reverse Voltage 28 31.5 35 42 56 63 70 105 140 V R(RMS) V Max DC Blocking Voltage 40 45 50 60 80 90 100 150 200 V R I Max average forward current (see fig.1) 30 A F(AV) Non repetitive peak forward surge current I 275 A FSM (8.3ms single half sine wave) V Max forward voltage 15A (per leg) 0.70 0.75 0.80 0.90 V F Maximum instantaneous T = 25C 0.05 J (2) I mA R reverse current at rated V T = 125C 20 R J -55 to +150 T T Storage and Junction temperature -65 to +175 C STG, J (1) All ratings at 25C unless specified otherwise (2) Measured with a test pulse of 380s to minimize self-heating effect Copyright 2010 1/3 www.Microsemi.com June 2010 Rev B MBR3040CT MBR3045CT MBR3050CT MBR3060CT MBR3080CT MBR3090CT MBR30100CT MBR30150CT MBR30200CT MBR3040CT to MBR30200CT Schottky Barrier Rectifiers Fig.1 Forward current derating curve. For capacitive load derate by 20% Fig.2 Typical instantaneous forward characteristics Fig.4 Maximum non repetitive surge current Fig.3 Typical reverse characteristics Thermal Characteristics Symbol Parameter Value Unit R Junction to case 1.4 C/W JC Copyright 2010 2/3 www.Microsemi.com June 2010 Rev B