TC6320K6-G Microchip

Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated GATE-to-SOURCE resistor The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN Integrated GATE-to-SOURCE Zener diode packages. Both MOSFETs have integrated GATE-to-SOURCE Low threshold resistors and GATE-to-SOURCE Zener diode clamps which are Low on-resistance desired for high voltage pulser applications. It is a complimentary, Low input capacitance high-speed, high voltage, GATE-clamped N- and P-channel Fast switching speeds MOSFET pair, which utilizes an advanced vertical DMOS Free from secondary breakdown structure and Supertexs well-proven silicon-gate manufacturing Low input and output leakage process. This combination produces a device with the power Independent, electrically isolated N- and handling capabilities of bipolar transistors and with the high P-channels input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device Applications is free from thermal runaway and thermally induced secondary High voltage pulsers breakdown. Amplifiers Buffers Supertexs vertical DMOS FETs are ideally suited to a wide range Piezoelectric transducer drivers of switching and amplifying applications where very low threshold General purpose line drivers voltage, high breakdown voltage, high input impedance, low Logic level interfaces input capacitance, and fast switching speeds are desired. Typical Application Circuit +100V VH VDD OE 10nF INA INB 10nF -100V VL VSS Supertex Supertex MD12xx, MD17xx, or MD18xx TC6320 Doc. DSFP-TC6320 Supertex inc. D011513 www.supertex.comTC6320 Ordering Information Product Summary Part Number Package Option Packing BV /BV R DSS DGS DS(ON) (V) (typ) () TC6320K6-G 8-Lead DFN (4x4) 3000/Reel N-Channel P-Channel N-Channel P-Channel TC6320TG-G 8-Lead SOIC 2000/Reel -G indicates package is RoHS compliant (Green) 500 -500 16 25 Pin Configurations 1 8 SN DN DN Absolute Maximum Ratings 2 GN 7 DN Parameter Value SP 3 6 DP DRAIN-to-SOURCE voltage BV DP DSS GP 4 5 DP DRAIN-to-GATE voltage BV DGS Operating and storage temperature -55C to +150C 8-Lead DFN Absolute Maximum Ratings are those values beyond which damage to the (top view) device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. S1 1 8 D1 Typical Thermal Resistance G1 2 7 D1 Package N-Channel ja O 8-Lead DFN 44 C/W S2 3 6 D2 O 8-Lead SOIC 101 C/W Note: G2 4 5 D2 1.0oz, 4-layer, 3x4 PCB P-Channel 8-Lead SOIC (top view) Package Marking Y = Last Digit of Year Sealed 6320 W = Code for Week Sealed YWLL L = Lot Number = Green Packaging Package may or may not include the following marks: Si or 8-Lead DFN YY = Year Sealed YYWW WW = Week Sealed C6320 L = Lot Number LLLL = Green Packaging Package may or may not include the following marks: Si or 8-Lead SOIC Doc. DSFP-TC6320 Supertex inc. D011513 2 www.supertex.com