EDB4432BBBJ-1DAIT-F-R Micron

Embedded LPDDR2 SDRAM Features Embedded LPDDR2 SDRAM EDB4416BBBH, EDB4432BBBJ Options Marking Features Density/Page Size Ultra-low-voltage core and I/O power supplies 4Gb / 1-CS - single die 44 Frequency range Organization 53310 MHz (data rate range: 106620 Mb/s/pin) x16 16 4n prefetch DDR architecture x32 32 8 internal banks for concurrent operation V /V /V : 1.8V/1.2V/1.2V B DD1 DD2 DDQ Multiplexed, double data rate, command/address Revision B inputs commands entered on each CK t/CK c FBGA green package edge 10mm x 11.5mm x 0.75mm, 134- BH Bidirectional/differential data strobe per byte of ball x16 data (DQS t/DQS c) 10mm x 11.5mm x 0.75mm, 134- BJ Programmable READ and WRITE latencies (RL/WL) ball x32 Burst length: 4, 8, and 16 Timing cycle time Per-bank refresh for concurrent operation 1.875ns RL = 8 -1D Auto temperature-compensated self refresh Operating temperature range (ATCSR) by built-in temperature sensor From 30C to +85C Blank Partial-array self refresh (PASR) From 40C to +85C IT Selectable output drive strength (DS) Clock-stop capability Lead-free (RoHS-compliant) and halogen-free packaging Table 1: Key Timing Parameters Speed Clock Rate Data Rate Grade (MHz) (Mb/s/pin) RL WL 1D 533 1066 8 4 Table 2: S4 Configuration Addressing Architecture 256 Meg x 16 128 Meg x 32 Die configuration 32 Meg x 16 x 8 banks 16 Meg x 32 x 8 banks Row addressing 16K A 13:0 16K A 13:0 Column addressing 2K A 10:0 1K A 9:0 X26P4QTWDSPK-13-10166 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 134b 2e0e embedded lpddr2 Rev. B 09/16 EN 2016 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Embedded LPDDR2 SDRAM Features Figure 1: LPDDR2 Part Numbering E D B 44 32 B B BH -1D IT -F Embedded Memory Environment Code F = Lead-free (RoHS-compliant) and halogen-free Type D = Packaged device Operating Temperature IT = 40C to +85C Product Family Blank = 30C to +85C B = DDR2 Mobile RAM Density Speed (package only) 1D = 1066 Mbps 44 = 4Gb/1-CS Organization Package BH = 134-ball WFBGA (10mm x 11.5mm) 16 = x16 32 = x32 BJ = 134-ball WFBGA (10mm x 11.5mm) Power Supply and Interface Revision = V = 1.2V B = V = 1.8V V DDQ DD1 DD2 S4B device HSUL FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. Table 3: Package Codes and Descriptions Package Die per Solder Ball Code Ball Count Ranks Channels Size (mm) Package Composition BH 134 1 1 (x16) 10 x 11.5 x 0.75, 0.65 pitch SDP SAC302 BJ 134 1 1 (x32) 10 x 11.5 x 0.75, 0.65 pitch SDP SAC302 Notes: 1. SDP = single-die package 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). X26P4QTWDSPK-13-10166 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 134b 2e0e embedded lpddr2 Rev. B 09/16 EN 2016 Micron Technology, Inc. All rights reserved.