2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTF25672F 2GB MT36HTF51272F 4GB For the component data sheets, refer to Microns Web site: www.micron.com Figure 1: 240-Pin FBDIMM (MO-256 R/C H) Features 240-pin, fully buffered dual in-line memory module Module height: 30.35mm (1.19in) (FBDIMM) Fast data transfer rates: PC2-4200, PC2-5300, or PC2-6400 2GB (256 Meg x 72), 4GB (512 Meg x 72) 3.2 Gb/s, 4 Gb/s, and 4.8 Gb/s link transfer rates SMBus interface to advanced memory buffer (AMB) for configuration register access High-speed, 1.5V differential, point-to-point link Options Marking between host controller and AMB Package Fault-tolerant can work around a bad bit lane in Y 240-pin DIMM (lead-free) each direction Frequency/CAS latency (CL) High-density scaling with up to eight FBDIMMs per -80E 2.5ns CL = 5 (DDR2-800) channel -667 3ns CL = 5 (DDR2-667) In-band and out-of-band command access 1 -53E 3.75ns CL = 4 (DDR2-533) Deterministic protocol: enables memory controller to optimize DRAM accesses for maximum Notes: 1. Not recommended for new designs. performance delivers precise control and repeatable memory behavior Automatic DDR2 SDRAM bus and channel calibration Transmitter de-emphasis reduces intersymbol interference (ISI) MBIST and IBIST test functions Transparent mode for DRAM test support V = V = +1.8V for DRAM DD DDQ V = 0.9V SDRAM command/address termination REF V = 1.5V for AMB CC V = +3V to +3.6V for AMB and EEPROM DDSPD Serial presence-detect (SPD) with EEPROM Gold edge contacts Dual rank Supports 95C operation with 2X refresh Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -667 PC2-5300 667 533 400 15 15 55 -53E PC2-4200 533 400 15 15 55 PDF: 09005aef829a1e4d/Source: 09005aef8297c0ad Micron Technology, Inc., reserves the right to change products or specifications without notice. HTF36C256 512x72F RC H.fm - Rev. B 9/09 EN 1 2007 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM Features Table 2: Addressing Parameter 2GB 4GB Refresh count 8K 8K Device bank address 4 BA 1:0 8 BA 2:0 Device page size per bank 1KB 1KB Device configuration 512Mb (128 Meg x 4) 1Gb (256 Meg x 4) Row address 16K A 13:0 16K A 13:0 Column address 2K A 11, 9:0 2K A 11, 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 2GB 1 Base device: MT47H128M4, 512Mb DDR2 SDRAM Memory Link Module Module Clock/ Clock Cycles Transfer 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) Rate MT36HTF25672FY-80E 2GB 256 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 4.8 GT/s MT36HTF25672FY-667 2GB 256 Meg x 72 5.3 GB/s 3ns/667 MT/s 5-5-5 4 GT/s MT36HTF25672FY-53E 2GB 256 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4 3.2 GT/s Table 4: Part Numbers and Timing Parameters 4GB 1 Base device: MT47H256M4, 1Gb DDR2 SDRAM Memory Link Module Module Clock/ Clock Cycles Transfer 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) Rate 4GB 512 Meg x 72 6.4 GB/s 2.5ns/800 MT/s 5-5-5 4.8 GT/s MT36HTF51272FY-80E 4GB 512 Meg x 72 5.3 GB/s 3ns/667 MT/s 5-5-5 4 GT/s MT36HTF51272FY-667 MT36HTF51272FY-53E 4GB 512 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4 3.2 GT/s Notes: 1. Data sheets for the base device can be found on Microns Web site. 2. All part numbers end with a four-place code (not shown), designating component, PCB, and AMB revisions. Consult factory for current revision codes. Example: MT36HTF51272FY- 667E1E1N8. PDF: 09005aef829a1e4d/Source: 09005aef8297c0ad Micron Technology, Inc., reserves the right to change products or specifications without notice. HTF36C256 512x72F RC H.fm - Rev. B 9/09 EN 2 2007 Micron Technology, Inc. All rights reserved.