X-On Electronics has gained recognition as a prominent supplier of MT40A1G8WE-083E AUT:B DRAM across the USA, India, Europe, Australia, and various other global locations. MT40A1G8WE-083E AUT:B DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT40A1G8WE-083E AUT:B Micron

MT40A1G8WE-083E AUT:B electronic component of Micron
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Part No.MT40A1G8WE-083E AUT:B
Manufacturer: Micron
Category: DRAM
Description: MICMT40A1G8WE-083E AUT:B
Datasheet: MT40A1G8WE-083E AUT:B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1900: USD 20.4581 ea
Line Total: USD 38870.39 
Availability - 0
MOQ: 1900  Multiples: 1900
Pack Size: 1900
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1900
Multiples : 1900
1900 : USD 20.4581

   
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We are delighted to provide the MT40A1G8WE-083E AUT:B from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT40A1G8WE-083E AUT:B and other electronic components in the DRAM category and beyond.

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8Gb: x8, x16 Automotive DDR4 SDRAM Features Automotive DDR4 SDRAM MT40A1G8 MT40A512M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 1 Gig x 8 1G8 V = 2.5V 125mV/+250mV PP 512 Meg x 16 512M16 On-die, internal, adjustable V generation REFDQ 78-ball FBGA package (Pb-free) x8 1.2V pseudo open-drain I/O 8mm x 12mm Rev. B WE Refresh time of 8192-cycle at T temperature range: C 96-ball FBGA package (Pb-free) x16 64ms at 40C to 85C 8mm x 14mm Rev. B JY 32ms at 85C to 95C Timing cycle time 16ms at 95C to 105C 0.750ns CL = 18 (DDR4-2666) -075E 8ms at 105C to 125C 0.833ns CL = 16 (DDR4-2400) -083E 16 internal banks (x8): 4 groups of 4 banks each Product certification 8 internal banks (x16): 2 groups of 4 banks each Automotive A 8n-bit prefetch architecture Operating temperature Programmable data strobe preambles Industrial (40 T 95C) IT C Data strobe preamble training Automotive (40 T 105C) AT C Command/Address latency (CAL) 3 Ultra-high (40 T 125C) UT C Multipurpose register read and write capability Revision :B Write leveling 1. Not all options listed can be combined to Notes: Self refresh mode define an offered product. Use the part Low-power auto self refresh (LPASR) catalog search on 8Gb: x8, x16 Automotive DDR4 SDRAM Features Table 1: Key Timing Parameters 1 t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) -075E 2666 18-18-18 13.5 13.5 13.5 -083E 2400 16-16-16 13.32 13.32 13.32 Note: 1. Refer to the Speed Bin Tables for backward compatibility. Table 2: Addressing Parameter 1024 Meg x 8 512 Meg x 16 Number of bank groups 4 2 Bank group address BG 1:0 BG0 Bank count per group 4 4 Bank address in bank group BA 1:0 BA 1:0 Row addressing 64K (A 15:0 ) 64K (A 15:0 ) Column addressing 1K (A 9:0 ) 1K (A 9:0 ) 1 Page size 1KB 2KB Note: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. Figure 1: Order Part Number Example Example Part Number: MT40A1G8WE-083EAAT:B - : Configuration Package Speed Revision MT40A Configuration Mark Revision 1 Gig x 8 1G8 :B 512 Meg x 16 512M16 Case Temperature Mark Package Mark Commercial None 78-ball 8.0mm x 12.0mm FBGA WE Industrial temperature IT 96-ball 8.0mm x 14.0mm FBGA JY Automotive AT Ultra-high UT Mark Speed Grade Product certification Mark t -083E CK = 0.833ns, CL = 16 Automotive t A -075E CK = 0.750ns, CL = 18 CCMTD-1406124318-10419 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 8gb auto ddr4 dram.pdf - Rev. E 08/18 EN 2016 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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