X-On Electronics has gained recognition as a prominent supplier of PBSS4021PZ Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4021PZ Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4021PZ Nexperia

PBSS4021PZ electronic component of Nexperia
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Part No.PBSS4021PZ
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: TRANSISTOR, PNP, 20V, 6.6A, SOT223
Datasheet: PBSS4021PZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9859 ea
Line Total: USD 0.99 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9859
10 : USD 0.8323
100 : USD 0.5758
500 : USD 0.4809
1000 : USD 0.3895

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Gain Bandwidth Ft Typ
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PBSS4021PZ from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4021PZ and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4021PZ 20 V, 6.6 A PNP low V (BISS) transistor CEsat Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) CEsat medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 6.6 A C I peak collector current single pulse -- 20 A CM t 1ms p 1 R collector-emitter I = 6A -22 33 m CEsat C saturation resistance I = 600 mA B 1 Pulse test: t 300 s 0.02. pPBSS4021PZ NXP Semiconductors 20 V, 6.6 A PNP low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 4 2, 4 2 collector 3emitter 1 4 collector 132 3 sym028 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4021PZ SC-73 plastic surface-mounted package with increased SOT223 heat sink 4 leads 4. Marking Table 4. Marking codes Type number Marking code PBSS4021PZ PB4021PZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 6.6 A C I peak collector current single pulse - 20 A CM t 1ms p I base current - 1A B PBSS4021PZ 1 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 31 March 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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