PBSS4021SN NXP

PBSS4021SN 20 V, 7.5 A NPN/NPN low V (BISS) transistor CEsat Rev. 2 11 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low V Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) CEsat medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP Name PBSS4021SN SOT96-1 SO8 PBSS4021SP PBSS4021SPN 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 7.5 A C I peak collector current single pulse -- 15 A CM t 1ms p 1 R collector-emitter I =5A I =0.5 A -25 35 m CEsat C B saturation resistance 1 Pulse test: t 300 s 0.02. pPBSS4021SN NXP Semiconductors 20 V, 7.5 A NPN/NPN low V (BISS) transistor CEsat 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1emitter TR1 8 5 8765 2 base TR1 3emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa966 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4021SN SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS4021SN 4021SN 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 7.5 A C I peak collector current single pulse t 1ms - 15 A CM p I base current - 1 A B 1 P total power dissipation T 25 C -0.73 W tot amb 2 -1 W 3 -1.7 W PBSS4021SN All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 11 October 2010 2 of 15