X-On Electronics has gained recognition as a prominent supplier of PBSS4021SP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4021SP Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4021SP NXP

PBSS4021SP electronic component of NXP
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Part No.PBSS4021SP
Manufacturer: NXP
Category: Bipolar Transistors - BJT
Description: TRANSISTOR,PNP/PNP,20V,SO8
Datasheet: PBSS4021SP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0336 ea
Line Total: USD 1.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0336
10 : USD 0.8891
25 : USD 0.8414
100 : USD 0.6676

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Module Configuration
Transition Frequency Ft
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4021SP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4021SP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4021SP 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat Rev. 2 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low V Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) CEsat medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN NPN/PNP complement complement NXP Name PBSS4021SP SOT96-1 SO8 PBSS4021SN PBSS4021SPN 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 6.3 A C I peak collector current single pulse -- 15 A CM t 1ms p 1 R collector-emitter I = 5A I = 0.5 A -36 54 m CEsat C B saturation resistance 1 Pulse test: t 300 s 0.02. pPBSS4021SP NXP Semiconductors 20 V, 6.3 A PNP/PNP low V (BISS) transistor CEsat 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1emitter TR1 8 5 8765 2 base TR1 3emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa976 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4021SP SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4. Marking Table 5. Marking codes Type number Marking code PBSS4021SP 4021SP 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 6.3 A C I peak collector current single pulse t 1ms - 15 A CM p I base current - 1A B 1 P total power dissipation T 25 C -0.73 W tot amb 2 -1 W 3 -1.7 W PBSS4021SP All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 11 October 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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